Weak localization and spin-orbit interaction in side-gate field effect devices at the LaAlO3/ SrTiO3 interface

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • D. Stornaiuolo
  • S. Gariglio
  • A. Fête
  • M. Gabay
  • D. Massarotti
  • J. M. Triscone

Detail(s)

Original languageEnglish
Article number235426
Journal / PublicationPhysical Review B - Condensed Matter and Materials Physics
Volume90
Issue number23
Publication statusPublished - 15 Dec 2014
Externally publishedYes

Abstract

Using field effect devices with side gates, we modulate the 2-dimensional electron gas hosted at the LaAlO3/SrTiO3 interface to study the temperature and doping evolution of the magnetotransport. The analysis of the data reveals different transport regimes depending on the interplay between the different (elastic, inelastic, and spin-orbit) scattering times and their temperature dependencies. We find that the spin-orbit interaction strongly affects the low-temperature transport in the normal state in a very large region of the phase diagram, extending beyond the superconducting dome.

Citation Format(s)

Weak localization and spin-orbit interaction in side-gate field effect devices at the LaAlO3/ SrTiO3 interface. / Stornaiuolo, D.; Gariglio, S.; Fête, A.; Gabay, M.; Li, D.; Massarotti, D.; Triscone, J. M.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 90, No. 23, 235426, 15.12.2014.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review