Manipulation of strain state in silicon nanoribbons by top-down approach

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • Zhiqiang Mu
  • Miao Zhang
  • Zhongying Xue
  • Gaodi Sun
  • Qinglei Guo
  • Da Chen
  • Gaoshan Huang
  • Yongfeng Mei
  • Zengfeng Di
  • Xi Wang

Detail(s)

Original languageEnglish
Article number174102
Journal / PublicationApplied Physics Letters
Volume106
Issue number17
Publication statusPublished - 27 Apr 2015

Link(s)

Abstract

Tensile strain is often utilized to enhance the electron mobility and luminescent characteristics of semiconductors. A top-down approach in conjunction with roll-up technology is adopted to produce high tensile strain in Si nanoribbons by patterning and releasing of the bridge-like structures. The tensile strain can be altered between uniaxial state and biaxial state by adjusting the dimensions of the patterns and can be varied controllably up to 3.2% and 0.9% for the uniaxial- and biaxial-strained Si nanoribbons, respectively. Three-dimensional finite element analysis is performed to investigate the mechanism of strain generation during patterning and releasing of the structure. Since the process mainly depends on the geometrical factors, the technique can be readily extended to other types of mechanical, electrical, and optical membranes.

Research Area(s)

Citation Format(s)

Manipulation of strain state in silicon nanoribbons by top-down approach. / Mu, Zhiqiang; Zhang, Miao; Xue, Zhongying et al.
In: Applied Physics Letters, Vol. 106, No. 17, 174102, 27.04.2015.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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