Graphene oxide nanosheets based organic field effect transistor for nonvolatile memory applications

Tae-Wook Kim; Yan Gao; Orb Acton; Hin-Lap Yip; Hong Ma; Hongzheng Chen; Alex K.-Y. Jen

doi:10.1063/1.3464292

Author(s)

Tae-Wook Kim
Yan Gao
Orb Acton
Hong Ma
Hongzheng Chen

Detail(s)

Original language	English
Article number	023310
Journal / Publication	Applied Physics Letters
Volume	97
Issue number	2
Online published	15 Jul 2010
Publication status	Published - Jul 2010
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1063/1.3464292 Final Published version
	Check@CityULib
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-77955152124&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(0d694fcd-190d-4a8f-8275-0356eed73ba3).html

Abstract

Reversible switching characteristics of organic nonvolatile memory transistors (ONVMTs) using chemically synthesized graphene oxide (GO) nanosheets as a charge-trapping layer are reported. The transfer curves of GO based ONVMTs showed large gate bias dependent hysteresis with threshold voltage shifts over 20 V. After writing and erasing, stored data were well maintained showing more than two orders of ON/OFF ratio (I_ON/I_OFF = ∼10²) for 10⁴ s. These results suggest that GO nanosheets are one potential candidate as the charge-trapping layer in ONVMTs. © 2010 American Institute of Physics.

Citation Format(s)

[ RIS ] [ BibTeX ]

Graphene oxide nanosheets based organic field effect transistor for nonvolatile memory applications. / Kim, Tae-Wook; Gao, Yan; Acton, Orb et al.
In: Applied Physics Letters, Vol. 97, No. 2, 023310, 07.2010.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Kim, T-W, Gao, Y, Acton, O, Yip, H-L, Ma, H, Chen, H & Jen, AK-Y 2010, 'Graphene oxide nanosheets based organic field effect transistor for nonvolatile memory applications', Applied Physics Letters, vol. 97, no. 2, 023310. https://doi.org/10.1063/1.3464292

Kim, T.-W., Gao, Y., Acton, O., Yip, H.-L., Ma, H., Chen, H., & Jen, A. K.-Y. (2010). Graphene oxide nanosheets based organic field effect transistor for nonvolatile memory applications. Applied Physics Letters, 97(2), Article 023310. https://doi.org/10.1063/1.3464292

Kim TW, Gao Y, Acton O, Yip HL, Ma H, Chen H et al. Graphene oxide nanosheets based organic field effect transistor for nonvolatile memory applications. Applied Physics Letters. 2010 Jul;97(2):023310. Epub 2010 Jul 15. doi: 10.1063/1.3464292

Kim, Tae-Wook ; Gao, Yan ; Acton, Orb et al. / Graphene oxide nanosheets based organic field effect transistor for nonvolatile memory applications. In: Applied Physics Letters. 2010 ; Vol. 97, No. 2.