Titanium-tungsten contacts to Si : The effects of alloying on Schottky contact and on silicide formation

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Original languageEnglish
Pages (from-to)6898-6905
Journal / PublicationJournal of Applied Physics
Issue number10
Publication statusPublished - 1982
Externally publishedYes


Contact reaction and Schottky barrier heights on Si were studied using Ti-W alloys of increasing W concentration (Ti, Ti8W2, Ti 4W6, Ti2W8) in order to determine the effect of alloy composition on Schottky contact behavior. Glancing angle x-ray diffraction, Rutherford backscattering spectroscopy, and scanning electron microscopy were used to analyze the contact reaction. Schottky barrier heights were determined from the I-V behavior of circular diodes. Four-point probe measurements were used to compute the film electrical resistivity. Our experiments show that the addition of small amounts of W has raised the formation temperature of Ti silicides and maintained a low barrier height (∼0.55 eV) Schottky contact on n-type Si up to 550 °C. A bilayer shallow contact metallurgy Si/Ti8W2/Ti3 W 7/Al which provides a low barrier metal contact to n-type Si as well as an effective diffusion barrier between Al and Si is proposed as a result of this study.

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