Power amplifier/low noise amplifier RF switch

Tze Kiu Lee; Wing Shing Chan; T. Y M Siu

doi:10.1049/el:20001404

Power amplifier/low noise amplifier RF switch

Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

Overview

6 Scopus Citations

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Author(s)

Related Research Unit(s)

Department of Electrical Engineering

Detail(s)

Original language	English
Pages (from-to)	1983-1984
Journal / Publication	Electronics Letters
Volume	36
Issue number	24
Publication status	Published - 23 Nov 2000

Link(s)

DOI	DOI https://doi.org/10.1049/el:20001404 Final Published version
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Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-0034315264&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(0b34f79d-c528-4f6c-b4d1-9609eda897b8).html

Abstract

Front-end RF switches commonly use pin diodes as the switching element. A novel RF switch using the existing front-end power amplifier and low noise amplifier to give better performance with reduced component count and lower cost is demonstrated.