Recent developments and applications of plasma immersion ion implantation

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Detail(s)

Original languageEnglish
Pages (from-to)289-296
Journal / PublicationJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume22
Issue number1
Publication statusPublished - Jan 2004

Abstract

The latest developments and applications of plasma immersion ion implantation (PIII) in semiconductors and nonsemiconductors are described. Plasma doping, which is a potential alternative to conventional beamline ion implantation in trench doping and shallow junction formation, is discussed. Another technique, the hydrogen PIII, which is used in the layer transfer technology, has gained acceptance with improved ion dose and energy uniformity as well as contamination control. The direct current PIII for planar sample processing, PIII for insulating materials and plasma surface modification of biomaterials are also presented.