Recent developments and applications of plasma immersion ion implantation
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
Original language | English |
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Pages (from-to) | 289-296 |
Journal / Publication | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 22 |
Issue number | 1 |
Publication status | Published - Jan 2004 |
Link(s)
Abstract
The latest developments and applications of plasma immersion ion implantation (PIII) in semiconductors and nonsemiconductors are described. Plasma doping, which is a potential alternative to conventional beamline ion implantation in trench doping and shallow junction formation, is discussed. Another technique, the hydrogen PIII, which is used in the layer transfer technology, has gained acceptance with improved ion dose and energy uniformity as well as contamination control. The direct current PIII for planar sample processing, PIII for insulating materials and plasma surface modification of biomaterials are also presented.
Citation Format(s)
Recent developments and applications of plasma immersion ion implantation. / Chu, Paul K.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 22, No. 1, 01.2004, p. 289-296.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 22, No. 1, 01.2004, p. 289-296.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review