Parallel silicide contacts

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

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Detail(s)

Original languageEnglish
Pages (from-to)3735-3739
Journal / PublicationJournal of Applied Physics
Volume51
Issue number7
Publication statusPublished - 1980
Externally publishedYes

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DOI

DOI
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Link to Scopus https://www.scopus.com/record/display.uri?eid=2-s2.0-0019036131&origin=recordpage
Permanent Link https://scholars.cityu.edu.hk/en/publications/publication(089450cd-c69d-4841-9098-dfb3d06792ef).html

Abstract

Parallel silicide contacts consisting of PtSi and NiSi with fixed ratios of contact areas were prepared for current-voltage and capacitance-voltage measurements of Schottky barrier height. These measurements were analyzed with models assuming a linear combination of thermionic emission currents or junction capacitances. The measured and the computed values of barrier height have been found to agree very well. A systematic diagnosis of parallel contacts under a variety of conditions is presented in the Appendix.

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Publication fingerprints text

100
Silicide Keyphrases
100
Electric Potential Physics
100
Capacitance Physics
100
barriers INIS
100
voltage INIS
100
capacitance INIS
100
height INIS
100
silicides INIS
50
Capacitance-voltage... Keyphrases
50
Barrier Height Keyphrases
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Citation Format(s)

[ RIS ] [ BibTeX ]
Parallel silicide contacts. / Ohdomari, I.; Tu, K. N.
In: Journal of Applied Physics, Vol. 51, No. 7, 1980, p. 3735-3739.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review