Shallow silicide contacts formed by using codeposited Pt2Si and Pt1.2Si films

M. Eizenberg; H. Föll; K. N. Tu

doi:10.1063/1.91981

Shallow silicide contacts formed by using codeposited Pt₂Si and Pt_1.2Si films

Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

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Author(s)

M. Eizenberg
H. Föll
K. N. Tu

Detail(s)

Original language	English
Pages (from-to)	547-549
Journal / Publication	Applied Physics Letters
Volume	37
Issue number	6
Publication status	Published - 1980
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1063/1.91981 Final Published version
	Check@CityULib
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-0042521276&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(077c25bb-35f2-48da-b611-74bec02cdc8b).html

Abstract

We have succeeded in making shallow silicide contacts on Si by using codeposited Pt₂Si and Pt_1.2Si alloyed films. Cross-sectional transmission electron microscopy showed that a uniform contact 10 nm deep was achieved by both films. Current-voltage measurements showed that the Schottky barrier height of these shallow contacts was as good as that of PtSi made by reacting pure Pt with n-Si.

Bibliographic Note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to lbscholars@cityu.edu.hk.

Citation Format(s)

[ RIS ] [ BibTeX ]

Shallow silicide contacts formed by using codeposited Pt₂Si and Pt_1.2Si films. / Eizenberg, M.; Föll, H.; Tu, K. N.

In: Applied Physics Letters, Vol. 37, No. 6, 1980, p. 547-549.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

Eizenberg, M, Föll, H & Tu, KN 1980, 'Shallow silicide contacts formed by using codeposited Pt₂Si and Pt_1.2Si films', Applied Physics Letters, vol. 37, no. 6, pp. 547-549. https://doi.org/10.1063/1.91981

Eizenberg, M., Föll, H., & Tu, K. N. (1980). Shallow silicide contacts formed by using codeposited Pt₂Si and Pt_1.2Si films. Applied Physics Letters, 37(6), 547-549. https://doi.org/10.1063/1.91981

Eizenberg M, Föll H, Tu KN. Shallow silicide contacts formed by using codeposited Pt₂Si and Pt_1.2Si films. Applied Physics Letters. 1980;37(6):547-549. doi: 10.1063/1.91981

Eizenberg, M. ; Föll, H. ; Tu, K. N. / Shallow silicide contacts formed by using codeposited Pt₂Si and Pt_1.2Si films. In: Applied Physics Letters. 1980 ; Vol. 37, No. 6. pp. 547-549.