High-performance and operationally stable organic thin-film transistors using bi-buffer layers with low-cost electrodes
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Article number | 385104 |
| Journal / Publication | Journal of Physics D: Applied Physics |
| Volume | 46 |
| Issue number | 38 |
| Online published | 5 Sep 2013 |
| Publication status | Published - 25 Sep 2013 |
| Externally published | Yes |
Link(s)
Abstract
We report a copper (Cu)-based source/drain (S/D) electrodes organic thin-film transistor (OTFT) with bi-buffer layer structure consisting of firstly a CuOx layer and secondly MoO3 layer. Comparing with single Cu s/d electrodes OTFTs, bi-buffer layer devices not only exhibit enhanced mobilities by more than five times, but also show an improvement of operation stability. The performance enhancement is attributed to improvement of interfacial properties between organic active layer and Cu s/d electrodes, which was analysed by x-ray photoelectron spectroscopy and contact resistance.
Citation Format(s)
High-performance and operationally stable organic thin-film transistors using bi-buffer layers with low-cost electrodes. / Zhou, Jianlin; Hao, Yuanyuan; Yu, Xinge et al.
In: Journal of Physics D: Applied Physics, Vol. 46, No. 38, 385104, 25.09.2013.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
