High-performance and operationally stable organic thin-film transistors using bi-buffer layers with low-cost electrodes

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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  • Jianlin Zhou
  • Yuanyuan Hao
  • Xinge Yu
  • Nanjia Zhou
  • Hui Lin


Original languageEnglish
Article number385104
Journal / PublicationJournal of Physics D: Applied Physics
Issue number38
Online published5 Sep 2013
Publication statusPublished - 25 Sep 2013
Externally publishedYes


We report a copper (Cu)-based source/drain (S/D) electrodes organic thin-film transistor (OTFT) with bi-buffer layer structure consisting of firstly a CuOx layer and secondly MoO3 layer. Comparing with single Cu s/d electrodes OTFTs, bi-buffer layer devices not only exhibit enhanced mobilities by more than five times, but also show an improvement of operation stability. The performance enhancement is attributed to improvement of interfacial properties between organic active layer and Cu s/d electrodes, which was analysed by x-ray photoelectron spectroscopy and contact resistance. 

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