Anomalous and Highly Efficient InAs Nanowire Phototransistors Based on Majority Carrier Transport at Room Temperature
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 8203-8209 |
| Journal / Publication | Advanced Materials |
| Volume | 26 |
| Issue number | 48 |
| Online published | 28 Oct 2014 |
| Publication status | Published - 23 Dec 2014 |
Link(s)
Abstract
Core/shell-like n-type InAs nanowire phototransistors based on majority-carrier-dominated photodetection are investigated. Under optical illumination, electrons generated from the core are excited into the self-assembled near-surface photogating layer, forming a built-in electric field to significantly regulate the core conductance. Anomalous high photoconductive gain and fast response time are obtained at room temperature.
Research Area(s)
- InAs nanowires, Majority carrier transport, Photogating effect, Phototransistors
Citation Format(s)
Anomalous and Highly Efficient InAs Nanowire Phototransistors Based on Majority Carrier Transport at Room Temperature. / Guo, Nan; Hu, Weida; Liao, Lei et al.
In: Advanced Materials, Vol. 26, No. 48, 23.12.2014, p. 8203-8209.
In: Advanced Materials, Vol. 26, No. 48, 23.12.2014, p. 8203-8209.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
