P-type InGaN across the entire alloy composition range

A systematic investigation on Mg doped and undoped InGaN epilayers grown by plasma-assisted molecular beam epitaxy has been conducted. Single phase InGaN alloys across the entire composition range were synthesized and Mg was doped into In_xGa_1-xN (0.1≤ x≤0.88) epilayers up to ∼10²⁰/cm³. Hall effect, thermopower, and electrochemical capacitance voltage experimental results demonstrate the realization of p-type InGaN across the entire alloy composition range for properly Mg doped InGaN. Hole densities have been measured or estimated to be in the lower ∼10¹⁸/cm³ range when the net acceptor concentrations are in the lower ∼10¹⁹/cm³ range across the composition range. © 2013 American Institute of Physics.