P-type InGaN across the entire alloy composition range

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • K. Wang
  • T. Araki
  • T. Katsuki
  • M. A. Mayer
  • E. Alarcon-Llado
  • J. W. Ager
  • W. Walukiewicz
  • Y. Nanishi

Detail(s)

Original languageEnglish
Article number102111
Journal / PublicationApplied Physics Letters
Volume102
Issue number10
Publication statusPublished - 11 Mar 2013
Externally publishedYes

Abstract

A systematic investigation on Mg doped and undoped InGaN epilayers grown by plasma-assisted molecular beam epitaxy has been conducted. Single phase InGaN alloys across the entire composition range were synthesized and Mg was doped into InxGa1-xN (0.1≤ x≤0.88) epilayers up to ∼1020/cm3. Hall effect, thermopower, and electrochemical capacitance voltage experimental results demonstrate the realization of p-type InGaN across the entire alloy composition range for properly Mg doped InGaN. Hole densities have been measured or estimated to be in the lower ∼1018/cm3 range when the net acceptor concentrations are in the lower ∼1019/cm3 range across the composition range. © 2013 American Institute of Physics.

Citation Format(s)

P-type InGaN across the entire alloy composition range. / Wang, K.; Araki, T.; Yu, K. M.; Katsuki, T.; Mayer, M. A.; Alarcon-Llado, E.; Ager, J. W.; Walukiewicz, W.; Nanishi, Y.

In: Applied Physics Letters, Vol. 102, No. 10, 102111, 11.03.2013.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review