TY - JOUR
T1 - Pt/AlGaN Nanoarchitecture
T2 - Toward High Responsivity, Self-Powered Ultraviolet-Sensitive Photodetection
AU - Wang, Danhao
AU - Liu, Xin
AU - Fang, Shi
AU - Huang, Chen
AU - Kang, Yang
AU - Yu, Huabin
AU - Liu, Zhongling
AU - Zhang, Haochen
AU - Long, Ran
AU - Xiong, Yujie
AU - Lin, Yangjian
AU - Yue, Yang
AU - Ge, Binghui
AU - Ng, Tien Khee
AU - Ooi, Boon S.
AU - Mi, Zetian
AU - He, Jr-Hau
AU - Sun, Haiding
PY - 2021/1/13
Y1 - 2021/1/13
N2 - Energy-saving photodetectors are the key components in future photonic systems. Particularly, self-powered photoelectrochemical-type photodetectors (PEC-PDs), which depart completely from the classical solid-state junction device, have lately intrigued intensive interest to meet next-generation power-independent and environment-sensitive photodetection. Herein, we construct, for the first time, solar-blind PEC PDs based on self-assembled AlGaN nanostructures on silicon. Importantly, with the proper surface platinum (Pt) decoration, a significant boost of photon responsivity by more than an order of magnitude was achieved in the newly built Pt/AlGaN nanoarchitectures, demonstrating strikingly high responsivity of 45 mA/W and record fast response/recovery time of 47/20 ms without external power source. Such high solar-blind photodetection originates from the unparalleled material quality, fast interfacial kinetics, as well as high carrier separation efficiency which suggests that embracement of defect-free wide-bandgap semiconductor nanostructures with appropriate surface decoration offers an unprecedented opportunity for designing future energy-efficient and large-scale optoelectronic systems on a silicon platform.
AB - Energy-saving photodetectors are the key components in future photonic systems. Particularly, self-powered photoelectrochemical-type photodetectors (PEC-PDs), which depart completely from the classical solid-state junction device, have lately intrigued intensive interest to meet next-generation power-independent and environment-sensitive photodetection. Herein, we construct, for the first time, solar-blind PEC PDs based on self-assembled AlGaN nanostructures on silicon. Importantly, with the proper surface platinum (Pt) decoration, a significant boost of photon responsivity by more than an order of magnitude was achieved in the newly built Pt/AlGaN nanoarchitectures, demonstrating strikingly high responsivity of 45 mA/W and record fast response/recovery time of 47/20 ms without external power source. Such high solar-blind photodetection originates from the unparalleled material quality, fast interfacial kinetics, as well as high carrier separation efficiency which suggests that embracement of defect-free wide-bandgap semiconductor nanostructures with appropriate surface decoration offers an unprecedented opportunity for designing future energy-efficient and large-scale optoelectronic systems on a silicon platform.
KW - AlGaN nanostructures
KW - photoelectrochemical photodetectors
KW - self-power
KW - solar-blind
UR - http://www.scopus.com/inward/record.url?scp=85098788759&partnerID=8YFLogxK
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-85098788759&origin=recordpage
U2 - 10.1021/acs.nanolett.0c03357
DO - 10.1021/acs.nanolett.0c03357
M3 - RGC 21 - Publication in refereed journal
SN - 1530-6984
VL - 21
SP - 120
EP - 129
JO - Nano Letters
JF - Nano Letters
IS - 1
ER -
