Proximity gettering with mega-electron-volt carbon and oxygen implantations

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

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Author(s)

  • H. Wong
  • N. W. Cheung
  • P. K. Chu
  • J. Liu
  • J. W. Mayer

Detail(s)

Original languageEnglish
Pages (from-to)1023-1025
Journal / PublicationApplied Physics Letters
Volume52
Issue number12
Publication statusPublished - 1988
Externally publishedYes

Abstract

We have demonstrated that a buried gettering layer can be formed with a single MeV ion implantation without damaging the top device region. The strong gettering efficiency of carbon implant and its linear dependence on dose are confirmed. A surprising feature of the carbon implanted layers is that no extended defects are formed after annealing for implant doses up to 2×1016 cm-2 at 3 MeV, compared to a layer of small precipitates and dislocations in the case of oxygen implantation. It is suggested that the carbon-related gettering centers are point defects or their clusters.

Citation Format(s)

Proximity gettering with mega-electron-volt carbon and oxygen implantations. / Wong, H.; Cheung, N. W.; Chu, P. K.; Liu, J.; Mayer, J. W.

In: Applied Physics Letters, Vol. 52, No. 12, 1988, p. 1023-1025.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal