Proximity gettering with mega-electron-volt carbon and oxygen implantations

H. Wong; N. W. Cheung; P. K. Chu; J. Liu; J. W. Mayer

doi:10.1063/1.99233

Proximity gettering with mega-electron-volt carbon and oxygen implantations

H. Wong
, N. W. Cheung
, P. K. Chu
, J. Liu
, J. W. Mayer

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

152 Citations (Scopus)

Abstract

We have demonstrated that a buried gettering layer can be formed with a single MeV ion implantation without damaging the top device region. The strong gettering efficiency of carbon implant and its linear dependence on dose are confirmed. A surprising feature of the carbon implanted layers is that no extended defects are formed after annealing for implant doses up to 2×10¹⁶ cm^-2 at 3 MeV, compared to a layer of small precipitates and dislocations in the case of oxygen implantation. It is suggested that the carbon-related gettering centers are point defects or their clusters.

Original language	English
Pages (from-to)	1023-1025
Journal	Applied Physics Letters
Volume	52
Issue number	12
DOIs	https://doi.org/10.1063/1.99233
Publication status	Published - 1988
Externally published	Yes

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title = "Proximity gettering with mega-electron-volt carbon and oxygen implantations",

abstract = "We have demonstrated that a buried gettering layer can be formed with a single MeV ion implantation without damaging the top device region. The strong gettering efficiency of carbon implant and its linear dependence on dose are confirmed. A surprising feature of the carbon implanted layers is that no extended defects are formed after annealing for implant doses up to 2×1016 cm-2 at 3 MeV, compared to a layer of small precipitates and dislocations in the case of oxygen implantation. It is suggested that the carbon-related gettering centers are point defects or their clusters.",

author = "H. Wong and Cheung, \{N. W.\} and Chu, \{P. K.\} and J. Liu and Mayer, \{J. W.\}",

year = "1988",

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T1 - Proximity gettering with mega-electron-volt carbon and oxygen implantations

AU - Wong, H.

AU - Cheung, N. W.

AU - Chu, P. K.

AU - Liu, J.

AU - Mayer, J. W.

PY - 1988

Y1 - 1988

N2 - We have demonstrated that a buried gettering layer can be formed with a single MeV ion implantation without damaging the top device region. The strong gettering efficiency of carbon implant and its linear dependence on dose are confirmed. A surprising feature of the carbon implanted layers is that no extended defects are formed after annealing for implant doses up to 2×1016 cm-2 at 3 MeV, compared to a layer of small precipitates and dislocations in the case of oxygen implantation. It is suggested that the carbon-related gettering centers are point defects or their clusters.

AB - We have demonstrated that a buried gettering layer can be formed with a single MeV ion implantation without damaging the top device region. The strong gettering efficiency of carbon implant and its linear dependence on dose are confirmed. A surprising feature of the carbon implanted layers is that no extended defects are formed after annealing for implant doses up to 2×1016 cm-2 at 3 MeV, compared to a layer of small precipitates and dislocations in the case of oxygen implantation. It is suggested that the carbon-related gettering centers are point defects or their clusters.

UR - https://www.scopus.com/pages/publications/0040679686

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0040679686&origin=recordpage

U2 - 10.1063/1.99233

DO - 10.1063/1.99233

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 52

SP - 1023

EP - 1025

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Proximity gettering with mega-electron-volt carbon and oxygen implantations

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