Properties of silicon oxynitride films annealed under enhanced hydrostatic pressure

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Original languageEnglish
Journal / PublicationJournal of the Electrochemical Society
Volume158
Issue number3
Publication statusPublished - 2011

Abstract

Silicon oxynitride films were deposited on Si by plasma-enhanced chemical vapor deposition using ammonia, nitrous oxide, and silane as precursors and subjected to preannealing in an oxygen atmosphere at 1100 or 1150°C under atmospheric pressure (105 Pa) for 5 h. The oxynitride films were then further processed at temperature up to 1100°C under argon hydrostatic pressure up to 1.2 GPa. The effects of high temperature-high hydrostatic pressure (HT-HP) treatment on the surface morphology, chemical bonding, crystallization effect, and photoluminescence (PL) of the SiON films were investigated. The PL intensity of silicon-rich oxynitride films is significantly enhanced by HT-HP processing. An explanation of this effect has been suggested. © 2011 The Electrochemical Society.