Properties of high-dielectric constant complex materials based on transition and rare-earth metal oxides

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review

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Author(s)

Detail(s)

Original languageEnglish
Title of host publicationInternational Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT
Pages761-764
Publication statusPublished - 2008
Externally publishedYes

Conference

Title2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
PlaceChina
CityBeijing
Period20 - 23 October 2008

Abstract

It was found in elemental transition or rare earth metal (TM/RE) oxides that the electrical and material properties are much poor than those of the conventional gate dielectric materials such as silicon oxide or oxynitride. It was also found that the electrical and material properties of the high-dielectric constant (high-k) films can be improved or compromised by using complex structures such as silicates, oxynitride, aluminate and titanate. This work reviews the properties of high-k MOS gate dielectric materials based on TM/RE complex oxides in either pseudo-binary or stoichiometric forms. The effects of doping with foreign atoms, such as nitrogen and aluminum, will also be discussed. © 2008 IEEE.

Citation Format(s)

Properties of high-dielectric constant complex materials based on transition and rare-earth metal oxides. / Wong, Hei.

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT. 2008. p. 761-764 4734655.

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review