Properties of Ga1-xMnxAs with high x (>0.1)

D. Chiba; K. M. Yu; W. Walukiewicz; Y. Nishitani; F. Matsukura; H. Ohno

doi:10.1063/1.2837469

Properties of Ga1-xMnxAs with high x (>0.1)

D. Chiba, K. M. Yu, W. Walukiewicz, Y. Nishitani, F. Matsukura, H. Ohno

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

16 Citations (Scopus)

Abstract

We have investigated the magnetic and the crystalline properties of a set of Ga1-x Mnx As layers with high nominal Mn compositions (x=0.101-0.198). Magnetization measurements and combined channeling Rutherford backscattering (c-RBS) and particle induced x-ray emission (c-PIXE) measurements have been performed to determine the effective Mn composition xeff and the fraction of Mn atoms at various lattice sites. Here, xeff determined from magnetization measurements, which increases with increasing x, is consistent with the results determined from c-RBS-PIXE measurements. © 2008 American Institute of Physics.

Original language	English
Article number	07D136
Journal	Journal of Applied Physics
Volume	103
Issue number	7
DOIs	https://doi.org/10.1063/1.2837469
Publication status	Published - 2008
Externally published	Yes

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title = "Properties of Ga1-xMnxAs with high x (>0.1)",

abstract = "We have investigated the magnetic and the crystalline properties of a set of Ga1-x Mnx As layers with high nominal Mn compositions (x=0.101-0.198). Magnetization measurements and combined channeling Rutherford backscattering (c-RBS) and particle induced x-ray emission (c-PIXE) measurements have been performed to determine the effective Mn composition xeff and the fraction of Mn atoms at various lattice sites. Here, xeff determined from magnetization measurements, which increases with increasing x, is consistent with the results determined from c-RBS-PIXE measurements. {\textcopyright} 2008 American Institute of Physics.",

author = "D. Chiba and Yu, {K. M.} and W. Walukiewicz and Y. Nishitani and F. Matsukura and H. Ohno",

year = "2008",

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language = "English",

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TY - JOUR

T1 - Properties of Ga1-xMnxAs with high x (>0.1)

AU - Chiba, D.

AU - Yu, K. M.

AU - Walukiewicz, W.

AU - Nishitani, Y.

AU - Matsukura, F.

AU - Ohno, H.

PY - 2008

Y1 - 2008

N2 - We have investigated the magnetic and the crystalline properties of a set of Ga1-x Mnx As layers with high nominal Mn compositions (x=0.101-0.198). Magnetization measurements and combined channeling Rutherford backscattering (c-RBS) and particle induced x-ray emission (c-PIXE) measurements have been performed to determine the effective Mn composition xeff and the fraction of Mn atoms at various lattice sites. Here, xeff determined from magnetization measurements, which increases with increasing x, is consistent with the results determined from c-RBS-PIXE measurements. © 2008 American Institute of Physics.

AB - We have investigated the magnetic and the crystalline properties of a set of Ga1-x Mnx As layers with high nominal Mn compositions (x=0.101-0.198). Magnetization measurements and combined channeling Rutherford backscattering (c-RBS) and particle induced x-ray emission (c-PIXE) measurements have been performed to determine the effective Mn composition xeff and the fraction of Mn atoms at various lattice sites. Here, xeff determined from magnetization measurements, which increases with increasing x, is consistent with the results determined from c-RBS-PIXE measurements. © 2008 American Institute of Physics.

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U2 - 10.1063/1.2837469

DO - 10.1063/1.2837469

M3 - RGC 21 - Publication in refereed journal

SN - 0021-8979

VL - 103

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

M1 - 07D136

ER -

Properties of Ga1-xMnxAs with high x (>0.1)

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