TY - JOUR
T1 - Proper Hot Filament CVD Conditions for Fabrication of Ti-Boron Doped Diamond Electrodes
AU - Chen, Xueming
AU - Chen, Guohua
N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].
PY - 2004
Y1 - 2004
N2 - Hot filament chemical vapor deposition (CVD) of boron-doped diamond films on Ti substrates was investigated under different conditions with CH4 and H2 as precursors. Accelerated life tests, and physiochemical as well as electrochemical characterization, were conducted to assess the qualities of the electrodes obtained. The proper conditions were found to be substrate temperature 850°C, filament temperature 2120-2150°C, CH4 concentration 0,8%, filament-substrate distance 8 mm, deposition time 15 h, and pressure 30 mbar, under which the films with well-defined diamond features could be successfully deposited on Ti substrates, In addition, the thereby-prepared electrodes demonstrated the longest service life and good voltammetric behavior. © 2004 The Electrochemical Society.
AB - Hot filament chemical vapor deposition (CVD) of boron-doped diamond films on Ti substrates was investigated under different conditions with CH4 and H2 as precursors. Accelerated life tests, and physiochemical as well as electrochemical characterization, were conducted to assess the qualities of the electrodes obtained. The proper conditions were found to be substrate temperature 850°C, filament temperature 2120-2150°C, CH4 concentration 0,8%, filament-substrate distance 8 mm, deposition time 15 h, and pressure 30 mbar, under which the films with well-defined diamond features could be successfully deposited on Ti substrates, In addition, the thereby-prepared electrodes demonstrated the longest service life and good voltammetric behavior. © 2004 The Electrochemical Society.
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U2 - 10.1149/1.1651529
DO - 10.1149/1.1651529
M3 - RGC 21 - Publication in refereed journal
SN - 0013-4651
VL - 151
JO - Journal of the Electrochemical Society
JF - Journal of the Electrochemical Society
IS - 4
ER -