Progress and Prospects of InAs-Based FinFETs From Process Optimization to Device Architectural Innovation

Indium arsenide (InAs)-based fin field-effect transistors (FinFETs) are emerging as potential alternatives to traditional Si technologies due to their exceptional carrier mobility and high saturation velocity, which are crucial for advancing Moore's law. Recent developments in operating principles, processing methods, and architectural designs have enabled the aggressive scaling of InAs-based FinFETs and their successful integration with Si wafers, bringing their key performances comparable to that of Si-based counterparts. However, several obstacles prevent their widespread adoption, including difficulties in creating uniform fin structures, optimizing metal contacts, and controlling interface defects. This review explores the recent innovations in the processing techniques and architectural designs of InAs-based FinFETs, with a focus on overcoming scaling and integration challenges. In addition, it proposes new technological approaches to address the limitations, supporting the continued evolution of InAs-based technology. © 1963-2012 IEEE.