Process simulation model for silicon ion implantation in undoped, LEC-grown GaAs

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • A. Bindal
  • K. L. Wang
  • S. J. Chang
  • M. A. Kallel
  • P. K. Chu

Detail(s)

Original languageEnglish
Pages (from-to)2414-2420
Journal / PublicationJournal of the Electrochemical Society
Volume136
Issue number8
Publication statusPublished - Aug 1989
Externally publishedYes

Abstract

The activation efficiency of implanted Si in LEC grown GaAs has been investigated experimentally. Atomic and carrier distributions of the implant have been obtained using SIMS, conventional, and step-etch C-V techniques, respectively. Based on these experimental observations, Si activation efficiency is found to be a strong function of the implantation fluence and annealing temperature, and a weak function of the implantation energy and annealing time. An activation efficiency model is also constructed as the result of these experimental evaluations. For simplicity the model ignores all the weak processing parameters in the computation of activation efficiency. A model reproducing the atomic concentration profile for a given implant has also been developed to use in the activation efficiency model.

Citation Format(s)

Process simulation model for silicon ion implantation in undoped, LEC-grown GaAs. / Bindal, A.; Wang, K. L.; Chang, S. J.; Kallel, M. A.; Chu, P. K.

In: Journal of the Electrochemical Society, Vol. 136, No. 8, 08.1989, p. 2414-2420.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review