Process and mechanism of CoSi2/Si solid phase epitaxy by multilayer reaction

Bing-Zong Li; Xin-Ping Qu; Guo-Ping Ru; Ning Wang; Paul  Chu

doi:10.1557/PROC-580-117

Process and mechanism of CoSi₂/Si solid phase epitaxy by multilayer reaction

Bing-Zong Li, Xin-Ping Qu, Guo-Ping Ru, Ning Wang, Paul Chu

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

A multilayer structure of Co/a-Si/Ti/Si(100) together with Co/Ti/Si(100) is applied to investigate the process and mechanism of CoSi₂ epitaxial growth on a Si(100) substrate. The experimental results show that by adding an amorphous Si layer with a certain thickness, the epitaxial quality of CoSi₂ is significantly improved. A multi-element amorphous layer is formed by a solid state amorphization reaction at the initial stage of the multilayer reaction. This layer acts as a diffusion barrier, which controls the atomic interdiffusion of Co and Si and limits the supply of Co atoms. It has a vital effect on the multilayer reaction kinetics, and the epitaxial growth of CoSi₂ on Si. The kinetics of the CoSi₂ growth process from multilayer reactions is investigated.

Original language	English
Title of host publication	Nucleation and Growth Processes in Materials
Editors	Antonios Gonis, Patrice E. A. Turchi, Alan J. Ardell
Publisher	Materials Research Society
Pages	117-122
ISBN (Print)	9781558994881
DOIs	https://doi.org/10.1557/PROC-580-117
Publication status	Published - Dec 1999
Event	1999 MRS Fall Meeting & Exhibit - Boton, United States Duration: 29 Nov 1999 → 3 Dec 1999 https://www.mrs.org/fall1999

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	580
ISSN (Print)	0272-9172

Conference

Conference	1999 MRS Fall Meeting & Exhibit
Place	United States
City	Boton
Period	29/11/99 → 3/12/99
Internet address	https://www.mrs.org/fall1999

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Li, B.-Z., Qu, X.-P., Ru, G.-P., Wang, N., & Chu, P. (1999). Process and mechanism of CoSi₂/Si solid phase epitaxy by multilayer reaction. In A. Gonis, P. E. A. Turchi, & A. J. Ardell (Eds.), Nucleation and Growth Processes in Materials (pp. 117-122). (Materials Research Society Symposium Proceedings; Vol. 580). Materials Research Society. https://doi.org/10.1557/PROC-580-117

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title = "Process and mechanism of CoSi2/Si solid phase epitaxy by multilayer reaction",

abstract = "A multilayer structure of Co/a-Si/Ti/Si(100) together with Co/Ti/Si(100) is applied to investigate the process and mechanism of CoSi2 epitaxial growth on a Si(100) substrate. The experimental results show that by adding an amorphous Si layer with a certain thickness, the epitaxial quality of CoSi2 is significantly improved. A multi-element amorphous layer is formed by a solid state amorphization reaction at the initial stage of the multilayer reaction. This layer acts as a diffusion barrier, which controls the atomic interdiffusion of Co and Si and limits the supply of Co atoms. It has a vital effect on the multilayer reaction kinetics, and the epitaxial growth of CoSi2 on Si. The kinetics of the CoSi2 growth process from multilayer reactions is investigated.",

author = "Bing-Zong Li and Xin-Ping Qu and Guo-Ping Ru and Ning Wang and Paul Chu",

year = "1999",

month = dec,

doi = "10.1557/PROC-580-117",

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isbn = "9781558994881",

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editor = "Antonios Gonis and Turchi, {Patrice E. A.} and Ardell, {Alan J.}",

booktitle = "Nucleation and Growth Processes in Materials",

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note = "1999 MRS Fall Meeting & Exhibit ; Conference date: 29-11-1999 Through 03-12-1999",

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Li, B-Z, Qu, X-P, Ru, G-P, Wang, N & Chu, P 1999, Process and mechanism of CoSi₂/Si solid phase epitaxy by multilayer reaction. in A Gonis, PEA Turchi & AJ Ardell (eds), Nucleation and Growth Processes in Materials. Materials Research Society Symposium Proceedings, vol. 580, Materials Research Society, pp. 117-122, 1999 MRS Fall Meeting & Exhibit, Boton, United States, 29/11/99. https://doi.org/10.1557/PROC-580-117

Process and mechanism of CoSi₂/Si solid phase epitaxy by multilayer reaction. / Li, Bing-Zong; Qu, Xin-Ping; Ru, Guo-Ping et al.
Nucleation and Growth Processes in Materials. ed. / Antonios Gonis; Patrice E. A. Turchi; Alan J. Ardell. Materials Research Society, 1999. p. 117-122 (Materials Research Society Symposium Proceedings; Vol. 580).

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

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T1 - Process and mechanism of CoSi2/Si solid phase epitaxy by multilayer reaction

AU - Li, Bing-Zong

AU - Qu, Xin-Ping

AU - Ru, Guo-Ping

AU - Wang, Ning

AU - Chu, Paul

PY - 1999/12

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N2 - A multilayer structure of Co/a-Si/Ti/Si(100) together with Co/Ti/Si(100) is applied to investigate the process and mechanism of CoSi2 epitaxial growth on a Si(100) substrate. The experimental results show that by adding an amorphous Si layer with a certain thickness, the epitaxial quality of CoSi2 is significantly improved. A multi-element amorphous layer is formed by a solid state amorphization reaction at the initial stage of the multilayer reaction. This layer acts as a diffusion barrier, which controls the atomic interdiffusion of Co and Si and limits the supply of Co atoms. It has a vital effect on the multilayer reaction kinetics, and the epitaxial growth of CoSi2 on Si. The kinetics of the CoSi2 growth process from multilayer reactions is investigated.

AB - A multilayer structure of Co/a-Si/Ti/Si(100) together with Co/Ti/Si(100) is applied to investigate the process and mechanism of CoSi2 epitaxial growth on a Si(100) substrate. The experimental results show that by adding an amorphous Si layer with a certain thickness, the epitaxial quality of CoSi2 is significantly improved. A multi-element amorphous layer is formed by a solid state amorphization reaction at the initial stage of the multilayer reaction. This layer acts as a diffusion barrier, which controls the atomic interdiffusion of Co and Si and limits the supply of Co atoms. It has a vital effect on the multilayer reaction kinetics, and the epitaxial growth of CoSi2 on Si. The kinetics of the CoSi2 growth process from multilayer reactions is investigated.

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