Probability current and antiresonances of particle tunneling through biased heterostructures

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

1 Scopus Citations
View graph of relations

Author(s)

Related Research Unit(s)

Detail(s)

Original languageEnglish
Pages (from-to)1237-1241
Journal / PublicationJournal of Nanoscience and Nanotechnology
Volume9
Issue number2
Publication statusPublished - Feb 2009

Abstract

A flow of independent particles, traveling across a biased heterostructure, is shown to produce an essentially constant probability current density in the gate. Based on this observation, a phenomenological boundary condition was proposed for evaluating the eigenfunctions of the Hamiltonian and for the computing the gate probability current density in a three-layer metal-oxide-semiconductor (MOS) heterostructure. Sharp antiresonances are obtained in the probability current, which are interpreted as quasi-bound states in the heterostructure. Results show that the antiresonant states should contribute the least to the gate current as the particles are strongly localized behind the interfacial barrier. The main contribution to the gate current of the MOS structure should come from the states between the antiresonances which are always supplied with particles from the bulk. Copyright © 2009 American Scientific Publishers All rights reserved.

Research Area(s)

  • Antiresonance, Heterostructure, Probability current.Probability Current and Antiresonances of Particle Tunneling Through Biased Heterostructures