Principle and process window of cerium dioxide thin film fabrication with dual plasma deposition

L.P. Wang; B.Y. Tang; X.B. Tian; Y.X. Leng; Q.Y. Zhang; P.K. Chu

Principle and process window of cerium dioxide thin film fabrication with dual plasma deposition

L.P. Wang, B.Y. Tang, X.B. Tian, Y.X. Leng, Q.Y. Zhang, P.K. Chu^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

9 Citations (Scopus)

Abstract

Cerium dioxide, CeO₂, is a potentially superior material in a myriad of areas, and many methods have been proposed to deposit single crystal CeO₂ thin films. A novel fabrication technique utilizing dual plasma generated by metal vacuum arc (MEVVA) and radio frequency (RF) is discussed in this paper. We have recently conducted a systematic investigation to determine the optimal process window to deposit CeO₂ thin films on Si(100) substrates. The X-ray diffraction results show the existence of CeO₂(100) in the as-deposited sample.

Original language	English
Pages (from-to)	29-30
Journal	Journal of Materials Science and Technology
Volume	17
Issue number	1
Publication status	Published - Jan 2001

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title = "Principle and process window of cerium dioxide thin film fabrication with dual plasma deposition",

abstract = "Cerium dioxide, CeO2, is a potentially superior material in a myriad of areas, and many methods have been proposed to deposit single crystal CeO2 thin films. A novel fabrication technique utilizing dual plasma generated by metal vacuum arc (MEVVA) and radio frequency (RF) is discussed in this paper. We have recently conducted a systematic investigation to determine the optimal process window to deposit CeO2 thin films on Si(100) substrates. The X-ray diffraction results show the existence of CeO2(100) in the as-deposited sample.",

author = "L.P. Wang and B.Y. Tang and X.B. Tian and Y.X. Leng and Q.Y. Zhang and P.K. Chu",

year = "2001",

month = jan,

language = "English",

volume = "17",

pages = "29--30",

journal = "Journal of Materials Science and Technology",

issn = "1005-0302",

publisher = "Elsevier Ltd.",

number = "1",

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TY - JOUR

T1 - Principle and process window of cerium dioxide thin film fabrication with dual plasma deposition

AU - Wang, L.P.

AU - Tang, B.Y.

AU - Tian, X.B.

AU - Leng, Y.X.

AU - Zhang, Q.Y.

AU - Chu, P.K.

PY - 2001/1

Y1 - 2001/1

N2 - Cerium dioxide, CeO2, is a potentially superior material in a myriad of areas, and many methods have been proposed to deposit single crystal CeO2 thin films. A novel fabrication technique utilizing dual plasma generated by metal vacuum arc (MEVVA) and radio frequency (RF) is discussed in this paper. We have recently conducted a systematic investigation to determine the optimal process window to deposit CeO2 thin films on Si(100) substrates. The X-ray diffraction results show the existence of CeO2(100) in the as-deposited sample.

AB - Cerium dioxide, CeO2, is a potentially superior material in a myriad of areas, and many methods have been proposed to deposit single crystal CeO2 thin films. A novel fabrication technique utilizing dual plasma generated by metal vacuum arc (MEVVA) and radio frequency (RF) is discussed in this paper. We have recently conducted a systematic investigation to determine the optimal process window to deposit CeO2 thin films on Si(100) substrates. The X-ray diffraction results show the existence of CeO2(100) in the as-deposited sample.

UR - http://www.scopus.com/inward/record.url?scp=0034784139&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0034784139&origin=recordpage

M3 - RGC 21 - Publication in refereed journal

SN - 1005-0302

VL - 17

SP - 29

EP - 30

JO - Journal of Materials Science and Technology

JF - Journal of Materials Science and Technology

IS - 1

ER -

Principle and process window of cerium dioxide thin film fabrication with dual plasma deposition

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