Pressure-dependent photoluminescence study of CuGaSe2

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • W. Shan
  • W. Walukiewicz
  • J. Wu
  • J. W. Ager III
  • S. Siebentritt
  • N. Rega

Detail(s)

Original languageEnglish
Pages (from-to)3117-3122
Journal / PublicationPhysica Status Solidi (B) Basic Research
Volume241
Issue number14
Publication statusPublished - Nov 2004
Externally publishedYes

Abstract

We present the results of a pressure-dependent photoluminescence (PL) study on CuGaSe2 films grown on GaAs substrate by metalorganic vapor phase epitaxy. The low-temperature PL spectra of the CuGaSe2 samples measured at atmospheric pressure are dominated by one near band edge exciton luminescence line and two strong and relatively broad emissions associated with donor acceptor pairs (DAP) transitions. All the observed luminescence emission lines shift toward higher energy with increasing pressure at the same rate. The nearly identical pressure coefficients of the two DAP emissions as compared to that of the exciton emission confirm the suggestion that the recombination processes associated with the DAPs involve one shallow effective-mass donor and two different acceptor species with different binding energies and related to two different native defects. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Citation Format(s)

Pressure-dependent photoluminescence study of CuGaSe2. / Shan, W.; Walukiewicz, W.; Wu, J. et al.
In: Physica Status Solidi (B) Basic Research, Vol. 241, No. 14, 11.2004, p. 3117-3122.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review