Preparation of si nanocrystallites by phase separation of si-rich silicon nitride

C. K. Wong; V. Filip; H. Wong; S. Stefan; M. Chan

doi:10.1109/ICMEL.2008.4559232

Preparation of si nanocrystallites by phase separation of si-rich silicon nitride

C. K. Wong
, V. Filip
, H. Wong
, S. Stefan
, M. Chan

Department of Electrical Engineering

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

1 Citation (Scopus)

Abstract

Silicon nanocrystallites embedded in silicon nitride were prepared by high-temperature annealing of silicon-rich silicon nitride (SRN) via the phase separation reaction. The silicon rich nitride films were deposited by low-pressure chemical-vapor deposition (LPCVD) and high temperature annealing. At sufficiently high temperatures, nanocrystallites are formed as a result of phase separation effect. The chemical composition and bonding structure of the silicon oxide and nitride based nanocrystals were analyzed using X-ray photoelectron spectroscopy (XPS). Photoluminescence (PL) measurements were also conducted to probe the luminescent properties of the SRN films. © 2008 IEEE.

Original language	English
Title of host publication	2008 26th International Conference on Microelectronics, Proceedings, MIEL 2008
Pages	99-102
DOIs	https://doi.org/10.1109/ICMEL.2008.4559232
Publication status	Published - 2008
Event	26th International Conference on Microelectronics, MIEL 2008 - Nis, Serbia Duration: 11 May 2008 → 14 May 2008

Conference

Conference	26th International Conference on Microelectronics, MIEL 2008
Place	Serbia
City	Nis
Period	11/05/08 → 14/05/08

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@inproceedings{b2dd9adacde84b08b3d4c1ca67d258d4,

title = "Preparation of si nanocrystallites by phase separation of si-rich silicon nitride",

abstract = "Silicon nanocrystallites embedded in silicon nitride were prepared by high-temperature annealing of silicon-rich silicon nitride (SRN) via the phase separation reaction. The silicon rich nitride films were deposited by low-pressure chemical-vapor deposition (LPCVD) and high temperature annealing. At sufficiently high temperatures, nanocrystallites are formed as a result of phase separation effect. The chemical composition and bonding structure of the silicon oxide and nitride based nanocrystals were analyzed using X-ray photoelectron spectroscopy (XPS). Photoluminescence (PL) measurements were also conducted to probe the luminescent properties of the SRN films. {\textcopyright} 2008 IEEE.",

author = "Wong, \{C. K.\} and V. Filip and H. Wong and S. Stefan and M. Chan",

year = "2008",

doi = "10.1109/ICMEL.2008.4559232",

language = "English",

isbn = "9781424418824",

pages = "99--102",

booktitle = "2008 26th International Conference on Microelectronics, Proceedings, MIEL 2008",

note = "26th International Conference on Microelectronics, MIEL 2008 ; Conference date: 11-05-2008 Through 14-05-2008",

}

Wong, CK, Filip, V, Wong, H, Stefan, S & Chan, M 2008, Preparation of si nanocrystallites by phase separation of si-rich silicon nitride. in 2008 26th International Conference on Microelectronics, Proceedings, MIEL 2008., 4559232, pp. 99-102, 26th International Conference on Microelectronics, MIEL 2008, Nis, Serbia, 11/05/08. https://doi.org/10.1109/ICMEL.2008.4559232

Preparation of si nanocrystallites by phase separation of si-rich silicon nitride. / Wong, C. K.; Filip, V.; Wong, H. et al.
2008 26th International Conference on Microelectronics, Proceedings, MIEL 2008. 2008. p. 99-102 4559232.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Preparation of si nanocrystallites by phase separation of si-rich silicon nitride

AU - Wong, C. K.

AU - Filip, V.

AU - Wong, H.

AU - Stefan, S.

AU - Chan, M.

PY - 2008

Y1 - 2008

N2 - Silicon nanocrystallites embedded in silicon nitride were prepared by high-temperature annealing of silicon-rich silicon nitride (SRN) via the phase separation reaction. The silicon rich nitride films were deposited by low-pressure chemical-vapor deposition (LPCVD) and high temperature annealing. At sufficiently high temperatures, nanocrystallites are formed as a result of phase separation effect. The chemical composition and bonding structure of the silicon oxide and nitride based nanocrystals were analyzed using X-ray photoelectron spectroscopy (XPS). Photoluminescence (PL) measurements were also conducted to probe the luminescent properties of the SRN films. © 2008 IEEE.

AB - Silicon nanocrystallites embedded in silicon nitride were prepared by high-temperature annealing of silicon-rich silicon nitride (SRN) via the phase separation reaction. The silicon rich nitride films were deposited by low-pressure chemical-vapor deposition (LPCVD) and high temperature annealing. At sufficiently high temperatures, nanocrystallites are formed as a result of phase separation effect. The chemical composition and bonding structure of the silicon oxide and nitride based nanocrystals were analyzed using X-ray photoelectron spectroscopy (XPS). Photoluminescence (PL) measurements were also conducted to probe the luminescent properties of the SRN films. © 2008 IEEE.

UR - https://www.scopus.com/pages/publications/51949115630

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-51949115630&origin=recordpage

U2 - 10.1109/ICMEL.2008.4559232

DO - 10.1109/ICMEL.2008.4559232

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 9781424418824

SP - 99

EP - 102

BT - 2008 26th International Conference on Microelectronics, Proceedings, MIEL 2008

T2 - 26th International Conference on Microelectronics, MIEL 2008

Y2 - 11 May 2008 through 14 May 2008

ER -

Preparation of si nanocrystallites by phase separation of si-rich silicon nitride

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