Preparation of AlCuFe quasicrystalline film by pulsed laser-arc deposition

Sedao; Tianmin Shao; Huiqing Mou; Meng Hua

doi:10.1016/j.tsf.2005.01.007

Preparation of AlCuFe quasicrystalline film by pulsed laser-arc deposition

Sedao
, Tianmin Shao
, Huiqing Mou
, Meng Hua

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

5 Citations (Scopus)

Abstract

Formation of stable AlCuFe quasicrystalline thin films by pulsed laser-arc deposition technique is reported in this paper. Using a single-source bulk AlCuFe quasicrystal as target material, AlCuFe film with ideal composition of quasicrystalline phase formation was deposited by suitably controlling the deposition parameters. The as-deposited film was basically in amorphous form. Icosahedral phase appeared after the films were annealed at elevated temperature. AlCuFe film was also deposited by pulsed laser ablation. Comparison of the quality of the films prepared using the two methods indicates that pulsed laser-arc deposition has greater ability in forming AlCuFe quasicrystalline structure. © 2005 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	1-5
Journal	Thin Solid Films
Volume	483
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2005.01.007
Publication status	Published - 1 Jul 2005

Research Keywords

Deposition
Laser-arc
Quasicrystal
Thin films

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10.1016/j.tsf.2005.01.007

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title = "Preparation of AlCuFe quasicrystalline film by pulsed laser-arc deposition",

abstract = "Formation of stable AlCuFe quasicrystalline thin films by pulsed laser-arc deposition technique is reported in this paper. Using a single-source bulk AlCuFe quasicrystal as target material, AlCuFe film with ideal composition of quasicrystalline phase formation was deposited by suitably controlling the deposition parameters. The as-deposited film was basically in amorphous form. Icosahedral phase appeared after the films were annealed at elevated temperature. AlCuFe film was also deposited by pulsed laser ablation. Comparison of the quality of the films prepared using the two methods indicates that pulsed laser-arc deposition has greater ability in forming AlCuFe quasicrystalline structure. {\textcopyright} 2005 Elsevier B.V. All rights reserved.",

keywords = "Deposition, Laser-arc, Quasicrystal, Thin films",

author = "Sedao and Tianmin Shao and Huiqing Mou and Meng Hua",

year = "2005",

month = jul,

day = "1",

doi = "10.1016/j.tsf.2005.01.007",

language = "English",

volume = "483",

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journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Preparation of AlCuFe quasicrystalline film by pulsed laser-arc deposition

AU - Sedao, null

AU - Shao, Tianmin

AU - Mou, Huiqing

AU - Hua, Meng

PY - 2005/7/1

Y1 - 2005/7/1

N2 - Formation of stable AlCuFe quasicrystalline thin films by pulsed laser-arc deposition technique is reported in this paper. Using a single-source bulk AlCuFe quasicrystal as target material, AlCuFe film with ideal composition of quasicrystalline phase formation was deposited by suitably controlling the deposition parameters. The as-deposited film was basically in amorphous form. Icosahedral phase appeared after the films were annealed at elevated temperature. AlCuFe film was also deposited by pulsed laser ablation. Comparison of the quality of the films prepared using the two methods indicates that pulsed laser-arc deposition has greater ability in forming AlCuFe quasicrystalline structure. © 2005 Elsevier B.V. All rights reserved.

AB - Formation of stable AlCuFe quasicrystalline thin films by pulsed laser-arc deposition technique is reported in this paper. Using a single-source bulk AlCuFe quasicrystal as target material, AlCuFe film with ideal composition of quasicrystalline phase formation was deposited by suitably controlling the deposition parameters. The as-deposited film was basically in amorphous form. Icosahedral phase appeared after the films were annealed at elevated temperature. AlCuFe film was also deposited by pulsed laser ablation. Comparison of the quality of the films prepared using the two methods indicates that pulsed laser-arc deposition has greater ability in forming AlCuFe quasicrystalline structure. © 2005 Elsevier B.V. All rights reserved.

KW - Deposition

KW - Laser-arc

KW - Quasicrystal

KW - Thin films

UR - https://www.scopus.com/pages/publications/18844379992

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-18844379992&origin=recordpage

U2 - 10.1016/j.tsf.2005.01.007

DO - 10.1016/j.tsf.2005.01.007

M3 - RGC 21 - Publication in refereed journal

SN - 0040-6090

VL - 483

SP - 1

EP - 5

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Preparation of AlCuFe quasicrystalline film by pulsed laser-arc deposition

Abstract

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