Preparation and electrical properties of highly (1 1 1) oriented antiferroelectric PLZST films by radio frequency magnetron sputtering

Zhengkui Xu; Wai-Hung Chan

doi:10.1016/j.actamat.2007.03.008

Preparation and electrical properties of highly (1 1 1) oriented antiferroelectric PLZST films by radio frequency magnetron sputtering

Zhengkui Xu, Wai-Hung Chan

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

16 Citations (Scopus)

Abstract

Highly (1 1 1) oriented lead lanthanum zirconate stannate titanate (PLZST) films were synthesized on Pt/Ti/SiO₂/Si substrates by radio frequency (RF) magnetron sputtering. The microstructure and electrical properties of the films were investigated as a function of post-annealing temperature. Smooth and crack-free films obtained by post-annealing at 700 °C for 30 min, and exhibit a dense columnar microstructure with a grain size of ∼0.85 μm. The sputtered PLZST films of nominal composition Pb_0.97La_0.02 (Zr_0.60Sn_0.30Ti_0.10)O₃ display a high saturation polarization of ∼70 μC cm^-2, a low antiferroelectric-to-ferroelectric switching field (-1), a reasonable dielectric constant and a low loss tangent. This combination of properties makes them attractive for microdevice applications. © 2007 Acta Materialia Inc.

Original language	English
Pages (from-to)	3923-3928
Journal	Acta Materialia
Volume	55
Issue number	11
DOIs	https://doi.org/10.1016/j.actamat.2007.03.008
Publication status	Published - Jun 2007

Research Keywords

Antiferroelectric
Electrical properties
Microstructure
Sputtering
Texture

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title = "Preparation and electrical properties of highly (1 1 1) oriented antiferroelectric PLZST films by radio frequency magnetron sputtering",

abstract = "Highly (1 1 1) oriented lead lanthanum zirconate stannate titanate (PLZST) films were synthesized on Pt/Ti/SiO2/Si substrates by radio frequency (RF) magnetron sputtering. The microstructure and electrical properties of the films were investigated as a function of post-annealing temperature. Smooth and crack-free films obtained by post-annealing at 700 °C for 30 min, and exhibit a dense columnar microstructure with a grain size of ∼0.85 μm. The sputtered PLZST films of nominal composition Pb0.97La0.02 (Zr0.60Sn0.30Ti0.10)O3 display a high saturation polarization of ∼70 μC cm-2, a low antiferroelectric-to-ferroelectric switching field (-1), a reasonable dielectric constant and a low loss tangent. This combination of properties makes them attractive for microdevice applications. {\textcopyright} 2007 Acta Materialia Inc.",

keywords = "Antiferroelectric, Electrical properties, Microstructure, Sputtering, Texture",

author = "Zhengkui Xu and Wai-Hung Chan",

year = "2007",

month = jun,

doi = "10.1016/j.actamat.2007.03.008",

language = "English",

volume = "55",

pages = "3923--3928",

journal = "Acta Materialia",

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TY - JOUR

T1 - Preparation and electrical properties of highly (1 1 1) oriented antiferroelectric PLZST films by radio frequency magnetron sputtering

AU - Xu, Zhengkui

AU - Chan, Wai-Hung

PY - 2007/6

Y1 - 2007/6

N2 - Highly (1 1 1) oriented lead lanthanum zirconate stannate titanate (PLZST) films were synthesized on Pt/Ti/SiO2/Si substrates by radio frequency (RF) magnetron sputtering. The microstructure and electrical properties of the films were investigated as a function of post-annealing temperature. Smooth and crack-free films obtained by post-annealing at 700 °C for 30 min, and exhibit a dense columnar microstructure with a grain size of ∼0.85 μm. The sputtered PLZST films of nominal composition Pb0.97La0.02 (Zr0.60Sn0.30Ti0.10)O3 display a high saturation polarization of ∼70 μC cm-2, a low antiferroelectric-to-ferroelectric switching field (-1), a reasonable dielectric constant and a low loss tangent. This combination of properties makes them attractive for microdevice applications. © 2007 Acta Materialia Inc.

AB - Highly (1 1 1) oriented lead lanthanum zirconate stannate titanate (PLZST) films were synthesized on Pt/Ti/SiO2/Si substrates by radio frequency (RF) magnetron sputtering. The microstructure and electrical properties of the films were investigated as a function of post-annealing temperature. Smooth and crack-free films obtained by post-annealing at 700 °C for 30 min, and exhibit a dense columnar microstructure with a grain size of ∼0.85 μm. The sputtered PLZST films of nominal composition Pb0.97La0.02 (Zr0.60Sn0.30Ti0.10)O3 display a high saturation polarization of ∼70 μC cm-2, a low antiferroelectric-to-ferroelectric switching field (-1), a reasonable dielectric constant and a low loss tangent. This combination of properties makes them attractive for microdevice applications. © 2007 Acta Materialia Inc.

KW - Antiferroelectric

KW - Electrical properties

KW - Microstructure

KW - Sputtering

KW - Texture

UR - http://www.scopus.com/inward/record.url?scp=34248597474&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-34248597474&origin=recordpage

U2 - 10.1016/j.actamat.2007.03.008

DO - 10.1016/j.actamat.2007.03.008

M3 - RGC 21 - Publication in refereed journal

SN - 1359-6454

VL - 55

SP - 3923

EP - 3928

JO - Acta Materialia

JF - Acta Materialia

IS - 11

ER -

Preparation and electrical properties of highly (1 1 1) oriented antiferroelectric PLZST films by radio frequency magnetron sputtering

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