Preparation and characterization of RuO2 thin films from Ru(CO)2(tmhd)2 by metalorganic chemical vapor deposition

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Reui-San Chen
  • Ying-Sheng Huang
  • Yao-Lun Chen
  • Yun Chi

Detail(s)

Original languageEnglish
Pages (from-to)85-91
Journal / PublicationThin Solid Films
Volume413
Issue number1-2
Online published14 May 2002
Publication statusPublished - 24 Jun 2002
Externally publishedYes

Abstract

A new metalorganic ruthenium compound which contained two β-diketonate and two CO ligands arranged in cis-disposition was used in preparation of high quality ruthenium dioxide (RuO2) thin films by cold-wall metalorganic chemical vapor deposition. A detailed characterization of the films including scanning electron microscopy (SEM), electrical resistivity, Raman scattering and X-ray diffraction measurements were carried out. The surface morphology of the films was investigated by SEM, from which a columnar growth pattern was observed using a cross-sectional scanning electron micrograph analysis. The resistivity measurement shows a metallic conducting characteristic, while Raman study indicates the formation of a high quality, nearly stress-free RuO2 film. In addition, changes of structural and electrical properties after thermal annealing are discussed. 

Research Area(s)

  • Chemical vapor deposition, Raman scattering, Resistivity, Ruthenium dioxide, Scanning electron microscopy, Thin film, X-ray diffraction