Precursor-Confined Chemical Vapor Deposition of 2D Single-Crystalline SexTe1−x Nanosheets for p‑Type Transistors and Inverters

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

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Material Science

100
Chemical Vapor Depo... Material Science
100
Transistor Material Science
100
Nanosheet Material Science
100
Phase Composition Material Science
66
Field Effect Transi... Material Science
33
Film Material Science
33
Temperature Material Science
33
Alloying Material Science
33
Defect Density Material Science
33
Hole Mobility Material Science
33
Complementary Metal... Material Science
33
Grain Boundaries Material Science

Keyphrases

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Chemical Vapor Depo... Keyphrases
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Two Dimensional Keyphrases
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P-type Keyphrases
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Transistor Keyphrases
100
Inverter Keyphrases
100
Nanosheets Keyphrases
100
Single-crystalline Keyphrases
66
Chemical Vapor Depo... Keyphrases
66
Field-effect Transi... Keyphrases
66
Tellurium Keyphrases
66
Selenium Keyphrases
66
Current Ratio Keyphrases
66
On-state Current Keyphrases
33
Room Temperature Keyphrases
33
High Performance Keyphrases
33
Band Gap Keyphrases
33
High Density Keyphrases
33
Leakage Current Keyphrases
33
Hole Mobility Keyphrases
33
Complementary Metal... Keyphrases
33
High Crystallinity Keyphrases
33
Small Bandgap Keyphrases
33
Operation Voltage Keyphrases
33
Inverter-based Keyphrases
33
MoS2 Nanosheets Keyphrases
33
Tunable Composition Keyphrases
33
Performance Fields Keyphrases
33
Transfer Curves Keyphrases
33
Grain Boundary Dens... Keyphrases
33
SeTe Keyphrases
33
Preformation Keyphrases
33
Density Defects Keyphrases
33
Voltage Transfer Keyphrases

INIS

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chemical vapor depo... INIS
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precursor INIS
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transistors INIS
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monocrystals INIS
100
inverters INIS
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voltage INIS
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field effect transi... INIS
66
tellurium INIS
66
selenium INIS
33
metals INIS
33
semiconductor mater... INIS
33
films INIS
33
curves INIS
33
defects INIS
33
growth INIS
33
performance INIS
33
oxides INIS
33
density INIS
33
thickness INIS
33
temperature range 0... INIS
33
grain boundaries INIS
33
optimization INIS
33
operation INIS
33
gain INIS
33
architecture INIS
33
leakage current INIS
33
hole mobility INIS
Research OutputsResearch Output authored by Precursor-Confined Chemical Vapor Deposition of 2D Single-Crystalline SexTe1−x Nanosheets for p‑Type Transistors and Inverters is tagged with the concept