Precise Patterning of Large-Scale TFT Arrays Based on Solution-Processed Oxide Semiconductors: A Comparative Study of Additive and Subtractive Approaches

Minmin Li; Jiwen Zheng; Huihua Xu; Zhaogui Wang; Qian Wu; Bolong Huang; Hang Zhou; Chuan Liu

doi:10.1002/admi.201700981

Precise Patterning of Large-Scale TFT Arrays Based on Solution-Processed Oxide Semiconductors: A Comparative Study of Additive and Subtractive Approaches

Minmin Li, Jiwen Zheng, Huihua Xu, Zhaogui Wang, Qian Wu, Bolong Huang, Hang Zhou, Chuan Liu^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

29 Citations (Scopus)

Abstract

Precise patterning of solution-processed oxide semiconductors is critical for cost-effective, large-scale, and high throughput fabrication of circuits and display application. In this paper, demonstration and comparison are made using the additive and subtractive patterning strategies to precisely fabricate wafer-scale thin film transistor arrays (1600 devices), which are based on high-quality solution-processed indium zinc oxide (IZO) and indium gallium zinc oxide (IGZO). The IZO and IGZO TFTs exhibit field-effect mobility up to 8.0 and 5.2 cm2 V−1 s−1 when using the additive method, whereas the highest mobility of 24.2 and 13.7 cm2 V−1 s−1 for IZO and IGZO TFTs is achieved when using the subtractive method. The X-ray photoelectronic spectroscopy studies and quantitative 2D device simulations together reveal that good device performance is attributed to moderate shallow donor-like states (providing electrons) from oxygen vacancy and few accepter-like states (trapping electrons) resulted from the dense structural framework of MO bonds. After examining the uniformity and reliability of the devices, the solution-patterned inverters are demonstrated using negative-channel metal oxide semiconductors, which show full swing output transfer characteristics and thus provide a promising method for solution-based fabrications of circuits. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Original language	English
Article number	1700981
Journal	Advanced Materials Interfaces
Volume	5
Issue number	1
DOIs	https://doi.org/10.1002/admi.201700981
Publication status	Published - 9 Jan 2018
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

Funding

The authors gratefully acknowledge the financial support of the project from Guangdong Provincial Department of Science and Technology (2015B090924001). The author B.H. acknowledges the support of the Natural Science Foundation of China (NSFC) for the Youth Scientist grant (Grant No. NSFC 11504309), and the Early Career Scheme (ECS) Fund (Grant No. PolyU 253026/16P) from the Research Grant Council (RGC) in Hong Kong.

Research Keywords

metal oxide semiconductors
semiconductor patterning
solution-processing
thin film transistors

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title = "Precise Patterning of Large-Scale TFT Arrays Based on Solution-Processed Oxide Semiconductors: A Comparative Study of Additive and Subtractive Approaches",

abstract = "Precise patterning of solution-processed oxide semiconductors is critical for cost-effective, large-scale, and high throughput fabrication of circuits and display application. In this paper, demonstration and comparison are made using the additive and subtractive patterning strategies to precisely fabricate wafer-scale thin film transistor arrays (1600 devices), which are based on high-quality solution-processed indium zinc oxide (IZO) and indium gallium zinc oxide (IGZO). The IZO and IGZO TFTs exhibit field-effect mobility up to 8.0 and 5.2 cm2 V−1 s−1 when using the additive method, whereas the highest mobility of 24.2 and 13.7 cm2 V−1 s−1 for IZO and IGZO TFTs is achieved when using the subtractive method. The X-ray photoelectronic spectroscopy studies and quantitative 2D device simulations together reveal that good device performance is attributed to moderate shallow donor-like states (providing electrons) from oxygen vacancy and few accepter-like states (trapping electrons) resulted from the dense structural framework of MO bonds. After examining the uniformity and reliability of the devices, the solution-patterned inverters are demonstrated using negative-channel metal oxide semiconductors, which show full swing output transfer characteristics and thus provide a promising method for solution-based fabrications of circuits. {\textcopyright} 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

keywords = "metal oxide semiconductors, semiconductor patterning, solution-processing, thin film transistors",

author = "Minmin Li and Jiwen Zheng and Huihua Xu and Zhaogui Wang and Qian Wu and Bolong Huang and Hang Zhou and Chuan Liu",

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Precise Patterning of Large-Scale TFT Arrays Based on Solution-Processed Oxide Semiconductors: A Comparative Study of Additive and Subtractive Approaches. / Li, Minmin; Zheng, Jiwen; Xu, Huihua et al.
In: Advanced Materials Interfaces, Vol. 5, No. 1, 1700981, 09.01.2018.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

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T1 - Precise Patterning of Large-Scale TFT Arrays Based on Solution-Processed Oxide Semiconductors

T2 - A Comparative Study of Additive and Subtractive Approaches

AU - Li, Minmin

AU - Zheng, Jiwen

AU - Xu, Huihua

AU - Wang, Zhaogui

AU - Wu, Qian

AU - Huang, Bolong

AU - Zhou, Hang

AU - Liu, Chuan

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PY - 2018/1/9

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N2 - Precise patterning of solution-processed oxide semiconductors is critical for cost-effective, large-scale, and high throughput fabrication of circuits and display application. In this paper, demonstration and comparison are made using the additive and subtractive patterning strategies to precisely fabricate wafer-scale thin film transistor arrays (1600 devices), which are based on high-quality solution-processed indium zinc oxide (IZO) and indium gallium zinc oxide (IGZO). The IZO and IGZO TFTs exhibit field-effect mobility up to 8.0 and 5.2 cm2 V−1 s−1 when using the additive method, whereas the highest mobility of 24.2 and 13.7 cm2 V−1 s−1 for IZO and IGZO TFTs is achieved when using the subtractive method. The X-ray photoelectronic spectroscopy studies and quantitative 2D device simulations together reveal that good device performance is attributed to moderate shallow donor-like states (providing electrons) from oxygen vacancy and few accepter-like states (trapping electrons) resulted from the dense structural framework of MO bonds. After examining the uniformity and reliability of the devices, the solution-patterned inverters are demonstrated using negative-channel metal oxide semiconductors, which show full swing output transfer characteristics and thus provide a promising method for solution-based fabrications of circuits. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

AB - Precise patterning of solution-processed oxide semiconductors is critical for cost-effective, large-scale, and high throughput fabrication of circuits and display application. In this paper, demonstration and comparison are made using the additive and subtractive patterning strategies to precisely fabricate wafer-scale thin film transistor arrays (1600 devices), which are based on high-quality solution-processed indium zinc oxide (IZO) and indium gallium zinc oxide (IGZO). The IZO and IGZO TFTs exhibit field-effect mobility up to 8.0 and 5.2 cm2 V−1 s−1 when using the additive method, whereas the highest mobility of 24.2 and 13.7 cm2 V−1 s−1 for IZO and IGZO TFTs is achieved when using the subtractive method. The X-ray photoelectronic spectroscopy studies and quantitative 2D device simulations together reveal that good device performance is attributed to moderate shallow donor-like states (providing electrons) from oxygen vacancy and few accepter-like states (trapping electrons) resulted from the dense structural framework of MO bonds. After examining the uniformity and reliability of the devices, the solution-patterned inverters are demonstrated using negative-channel metal oxide semiconductors, which show full swing output transfer characteristics and thus provide a promising method for solution-based fabrications of circuits. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

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M3 - RGC 21 - Publication in refereed journal

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ER -

Precise Patterning of Large-Scale TFT Arrays Based on Solution-Processed Oxide Semiconductors: A Comparative Study of Additive and Subtractive Approaches

Abstract

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Research Keywords

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