Power amplifier/low noise amplifier RF switch

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

6 Scopus Citations
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Detail(s)

Original languageEnglish
Pages (from-to)1983-1984
Journal / PublicationElectronics Letters
Volume36
Issue number24
Publication statusPublished - 23 Nov 2000

Abstract

Front-end RF switches commonly use pin diodes as the switching element. A novel RF switch using the existing front-end power amplifier and low noise amplifier to give better performance with reduced component count and lower cost is demonstrated.

Citation Format(s)

Power amplifier/low noise amplifier RF switch. / Lee, Tze Kiu; Chan, Wing Shing; Siu, T. Y M.
In: Electronics Letters, Vol. 36, No. 24, 23.11.2000, p. 1983-1984.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review