Abstract
A comparative study to determine if fundamental differences in ion-implanted dopant diffusion and activation between furnace annealing (FA) and rapid thermal annealing (RTA) has been initiated. A direct comparison between FA/RTA samples is possible through our ability to accurately determine the annealing time-Temperature (t-T) profile of both furnace and rapid thermally annealed samples. Results indicate that a comparison of the two annealing methods under identical time-Temperature profiles for a variety annealing conditions leads to distinctive differences in dopant activation and diffusion for a variety of implanted dopant species.
Original language | English |
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Title of host publication | MEETING ABSTRACTS |
Pages | 441-442 |
Volume | 96-1 |
Publication status | Published - 1996 |
Event | 189th Electrochemical Society Meeting - Los Angeles, United States Duration: 5 May 1996 → 10 May 1996 |
Conference
Conference | 189th Electrochemical Society Meeting |
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Country/Territory | United States |
City | Los Angeles |
Period | 5/05/96 → 10/05/96 |