Post-Implant Anneal: Fundamental Differences in Dopant Diffusion and Activation due to Rapid Thermal Annealing / Furnace Annealing

P. S. Choi, T. Su, R. D. Chang, P. K. Chu, D. L. Kwong

    Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review

    Abstract

    A comparative study to determine if fundamental differences in ion-implanted dopant diffusion and activation between furnace annealing (FA) and rapid thermal annealing (RTA) has been initiated. A direct comparison between FA/RTA samples is possible through our ability to accurately determine the annealing time-Temperature (t-T) profile of both furnace and rapid thermally annealed samples. Results indicate that a comparison of the two annealing methods under identical time-Temperature profiles for a variety annealing conditions leads to distinctive differences in dopant activation and diffusion for a variety of implanted dopant species.
    Original languageEnglish
    Title of host publicationMEETING ABSTRACTS
    Pages441-442
    Volume96-1
    Publication statusPublished - 1996
    Event189th Electrochemical Society Meeting - Los Angeles, United States
    Duration: 5 May 199610 May 1996

    Conference

    Conference189th Electrochemical Society Meeting
    Country/TerritoryUnited States
    CityLos Angeles
    Period5/05/9610/05/96

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