Porous silicon vapor sensor based on polarization interferometry

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • R. Liu
  • C. H. Tsai
  • Y. Fainman
  • T. A. Schmedake
  • M. J. Sailor

Detail(s)

Original languageEnglish
Pages (from-to)820-821
Journal / PublicationConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume2
Publication statusPublished - 2001
Externally publishedYes

Conference

Title14th Annual Meeting of the IEEE Lasers and Electro-Optics Society
PlaceUnited States
CitySan Diego, CA
Period11 - 15 November 2001

Abstract

A signal transduction mechanism based on the optical form birefringence property of porous silicon was presented. Application of the mechanism to vapor sensing was demonstrated. The porous silicon sample was prepared by anodic etching of a silicon wafer in a solution of aqueous HF with ethanol in the ratio of 3:1 at room temperature. The sample was placed between a pair of crossed polarizers at ±45° to the plane of incidence. Interference of the two polarization components resulted in a modulation of the transmitted intensity indicating the change in ethanol vapor concentration.

Citation Format(s)

Porous silicon vapor sensor based on polarization interferometry. / Liu, R.; Tsai, C. H.; Fainman, Y. et al.
In: Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, Vol. 2, 2001, p. 820-821.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review