TY - JOUR
T1 - Polyhedral Oligomeric Silsesquioxane Enhances the Brightness of Perovskite Nanocrystal-Based Green Light-Emitting Devices
AU - Huang, He
AU - Lin, Hong
AU - Kershaw, Stephen V.
AU - Susha, Andrei S.
AU - Choy, Wallace C. H.
AU - Rogach, Andrey L.
PY - 2016/10/24
Y1 - 2016/10/24
N2 - The beneficial role of the insulating material polyhedral oligomeric silsesquioxane (POSS) as a solution additive or an additional hole-blocking layer to enhance the performance of electroluminescent green light-emitting devices (LEDs) based on CsPbBr3 perovskite nanocrystals is demonstrated. POSS improves the surface coverage and the morphological features of the films deposited either from supernatant or suspension of perovskite nanocrystals. The external quantum efficiency and the luminance efficiency of LEDs with an additional POSS layer reach 0.35% and 1.20 cd/A, respectively, constituting a more than 17-fold enhancement to the reference devices without POSS; the LED peak luminance reaches 2983 cd/m2, and the device stability is improved. The POSS acts as a hole-blocking layer between the perovskite nanocrystals and TPBi, keeping both electrons and holes located within the active layer for an efficient recombination.
AB - The beneficial role of the insulating material polyhedral oligomeric silsesquioxane (POSS) as a solution additive or an additional hole-blocking layer to enhance the performance of electroluminescent green light-emitting devices (LEDs) based on CsPbBr3 perovskite nanocrystals is demonstrated. POSS improves the surface coverage and the morphological features of the films deposited either from supernatant or suspension of perovskite nanocrystals. The external quantum efficiency and the luminance efficiency of LEDs with an additional POSS layer reach 0.35% and 1.20 cd/A, respectively, constituting a more than 17-fold enhancement to the reference devices without POSS; the LED peak luminance reaches 2983 cd/m2, and the device stability is improved. The POSS acts as a hole-blocking layer between the perovskite nanocrystals and TPBi, keeping both electrons and holes located within the active layer for an efficient recombination.
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U2 - 10.1021/acs.jpclett.6b02224
DO - 10.1021/acs.jpclett.6b02224
M3 - RGC 21 - Publication in refereed journal
SN - 1948-7185
VL - 7
SP - 4398
EP - 4404
JO - Journal of Physical Chemistry Letters
JF - Journal of Physical Chemistry Letters
IS - 21
ER -