Polycrystalline hexagonal boron nitride films on SiO2 for III-V semiconductor applications

J. L. Hurd; D. L. Perry; B. T. Lee; K. M. Yu; E. D. Bourret; E. E. Haller

doi:10.1557/JMR.1989.0350

Author(s)

J. L. Hurd
D. L. Perry
B. T. Lee
E. D. Bourret
E. E. Haller

Detail(s)

Original language	English
Pages (from-to)	350-354
Journal / Publication	Journal of Materials Research
Volume	4
Issue number	2
Publication status	Published - Mar 1989
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1557/JMR.1989.0350 Final Published version
	Check@CityULib
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-0024622568&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(1417b38f-f04e-411a-bf65-1d95294ae42c).html

Abstract

Isotropic hexagonal BN (h-BN) films were deposited; on SiO₂ crucibles used for synthesis of GaAs. Deposited films were analyzed for composition, morphology, and growth rates using proton resonant scattering, optical absorption, x-ray and electron diffraction, and transmission electron microscopy. The silicon concentration of GaAs synthesized in BN coated crucibles was approximately one order of magnitude higher than that for GaAs synthesized in uncoated crucibles under identical synthesis conditions.

Citation Format(s)

[ RIS ] [ BibTeX ]

Polycrystalline hexagonal boron nitride films on SiO₂ for III-V semiconductor applications. / Hurd, J. L.; Perry, D. L.; Lee, B. T. et al.
In: Journal of Materials Research, Vol. 4, No. 2, 03.1989, p. 350-354.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

Hurd, JL, Perry, DL, Lee, BT, Yu, KM, Bourret, ED & Haller, EE 1989, 'Polycrystalline hexagonal boron nitride films on SiO₂ for III-V semiconductor applications', Journal of Materials Research, vol. 4, no. 2, pp. 350-354. https://doi.org/10.1557/JMR.1989.0350

Hurd, J. L., Perry, D. L., Lee, B. T., Yu, K. M., Bourret, E. D., & Haller, E. E. (1989). Polycrystalline hexagonal boron nitride films on SiO₂ for III-V semiconductor applications. Journal of Materials Research, 4(2), 350-354. https://doi.org/10.1557/JMR.1989.0350

Hurd JL, Perry DL, Lee BT, Yu KM, Bourret ED, Haller EE. Polycrystalline hexagonal boron nitride films on SiO₂ for III-V semiconductor applications. Journal of Materials Research. 1989 Mar;4(2):350-354. doi: 10.1557/JMR.1989.0350

Hurd, J. L. ; Perry, D. L. ; Lee, B. T. et al. / Polycrystalline hexagonal boron nitride films on SiO₂ for III-V semiconductor applications. In: Journal of Materials Research. 1989 ; Vol. 4, No. 2. pp. 350-354.