Plasmon-Enhanced Photovoltaic Characteristics of Black Phosphorus-MoS  2 Heterojunction

Chaojian Hou; Lijun Yang; Bo Li; Qihan Zhang; Yuefeng Li; Qiuyang Yue; Yang Wang; Zhan Yang; Lixin Dong

doi:10.1109/NANO.2018.8626287

Plasmon-Enhanced Photovoltaic Characteristics of Black Phosphorus-MoS ₂ Heterojunction

Chaojian Hou, Lijun Yang^*, Bo Li, Qihan Zhang, Yuefeng Li, Qiuyang Yue, Yang Wang, Zhan Yang^*, Lixin Dong^*

^*Corresponding author for this work

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

Heterojunctions based on atomically thin p-type black phosphorus (BP) and n-type MoS ₂ present their outstanding performance in electronic and optoelectronic devices. However, the relative weak photovoltaic characteristics offsets their advantages for high-performance phototransistors or solar cells. Herein, a plasmonic optical antenna arrays with 15nm gap were placed on the overlap regions of BP/ MoS ₂ heterostructures for effective light-harvesting. The results demonstrate the photovoltaic characteristics of BP/ MoS ₂ heterostructures is clearly enhanced through the hot electrons excited from optical antenna arrays under near-infrared laser (λ=830nm). More important, this enhancement is mainly dominated by effective photo-carrier separation under higher built-in electric field at the reverse bias. In addition, the reduction of photocurrents at the forward bias is ascribed to the strong scattering from plasmon-induced heat. Our findings are expected to be valuable for the development of plasmon-enhanced photodetectors and photovoltaic devices.

Original language	English
Title of host publication	18th International Conference on Nanotechnology (IEEE-NANO)
Publisher	IEEE Computer Society
Volume	2018-July
ISBN (Electronic)	978-15386-5336-4
ISBN (Print)	978-1-5386-5337-1
DOIs	https://doi.org/10.1109/NANO.2018.8626287
Publication status	Published - 24 Jan 2019
Externally published	Yes
Event	18th International Conference on Nanotechnology, NANO 2018 - Cork, Ireland Duration: 23 Jul 2018 → 26 Jul 2018

Publication series

Name	Proceedings of the IEEE Conference on Nanotechnology
Volume	2018-July
ISSN (Print)	1944-9399
ISSN (Electronic)	1944-9380

Conference

Conference	18th International Conference on Nanotechnology, NANO 2018
Country/Territory	Ireland
City	Cork
Period	23/07/18 → 26/07/18

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/NANO.2018.8626287

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Cite this

Hou, C., Yang, L., Li, B., Zhang, Q., Li, Y., Yue, Q., Wang, Y., Yang, Z., & Dong, L. (2019). Plasmon-Enhanced Photovoltaic Characteristics of Black Phosphorus-MoS ₂ Heterojunction. In 18th International Conference on Nanotechnology (IEEE-NANO) (Vol. 2018-July). Article 8626287 (Proceedings of the IEEE Conference on Nanotechnology; Vol. 2018-July). IEEE Computer Society. https://doi.org/10.1109/NANO.2018.8626287

@inproceedings{520d5b5dcdec4c1c90466d85006ee8ab,

title = "Plasmon-Enhanced Photovoltaic Characteristics of Black Phosphorus-MoS 2 Heterojunction",

abstract = "Heterojunctions based on atomically thin p-type black phosphorus (BP) and n-type MoS 2 present their outstanding performance in electronic and optoelectronic devices. However, the relative weak photovoltaic characteristics offsets their advantages for high-performance phototransistors or solar cells. Herein, a plasmonic optical antenna arrays with 15nm gap were placed on the overlap regions of BP/ MoS 2 heterostructures for effective light-harvesting. The results demonstrate the photovoltaic characteristics of BP/ MoS 2 heterostructures is clearly enhanced through the hot electrons excited from optical antenna arrays under near-infrared laser (λ=830nm). More important, this enhancement is mainly dominated by effective photo-carrier separation under higher built-in electric field at the reverse bias. In addition, the reduction of photocurrents at the forward bias is ascribed to the strong scattering from plasmon-induced heat. Our findings are expected to be valuable for the development of plasmon-enhanced photodetectors and photovoltaic devices. ",

author = "Chaojian Hou and Lijun Yang and Bo Li and Qihan Zhang and Yuefeng Li and Qiuyang Yue and Yang Wang and Zhan Yang and Lixin Dong",

year = "2019",

month = jan,

day = "24",

doi = "10.1109/NANO.2018.8626287",

language = "English",

isbn = "978-1-5386-5337-1",

volume = "2018-July",

series = "Proceedings of the IEEE Conference on Nanotechnology",

publisher = "IEEE Computer Society",

booktitle = "18th International Conference on Nanotechnology (IEEE-NANO)",

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note = "18th International Conference on Nanotechnology, NANO 2018 ; Conference date: 23-07-2018 Through 26-07-2018",

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Hou, C, Yang, L, Li, B, Zhang, Q, Li, Y, Yue, Q, Wang, Y, Yang, Z & Dong, L 2019, Plasmon-Enhanced Photovoltaic Characteristics of Black Phosphorus-MoS ₂ Heterojunction. in 18th International Conference on Nanotechnology (IEEE-NANO). vol. 2018-July, 8626287, Proceedings of the IEEE Conference on Nanotechnology, vol. 2018-July, IEEE Computer Society, 18th International Conference on Nanotechnology, NANO 2018, Cork, Ireland, 23/07/18. https://doi.org/10.1109/NANO.2018.8626287

Plasmon-Enhanced Photovoltaic Characteristics of Black Phosphorus-MoS ₂ Heterojunction. / Hou, Chaojian; Yang, Lijun; Li, Bo et al.
18th International Conference on Nanotechnology (IEEE-NANO). Vol. 2018-July IEEE Computer Society, 2019. 8626287 (Proceedings of the IEEE Conference on Nanotechnology; Vol. 2018-July).

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

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T1 - Plasmon-Enhanced Photovoltaic Characteristics of Black Phosphorus-MoS 2 Heterojunction

AU - Hou, Chaojian

AU - Yang, Lijun

AU - Li, Bo

AU - Zhang, Qihan

AU - Li, Yuefeng

AU - Yue, Qiuyang

AU - Wang, Yang

AU - Yang, Zhan

AU - Dong, Lixin

PY - 2019/1/24

Y1 - 2019/1/24

N2 - Heterojunctions based on atomically thin p-type black phosphorus (BP) and n-type MoS 2 present their outstanding performance in electronic and optoelectronic devices. However, the relative weak photovoltaic characteristics offsets their advantages for high-performance phototransistors or solar cells. Herein, a plasmonic optical antenna arrays with 15nm gap were placed on the overlap regions of BP/ MoS 2 heterostructures for effective light-harvesting. The results demonstrate the photovoltaic characteristics of BP/ MoS 2 heterostructures is clearly enhanced through the hot electrons excited from optical antenna arrays under near-infrared laser (λ=830nm). More important, this enhancement is mainly dominated by effective photo-carrier separation under higher built-in electric field at the reverse bias. In addition, the reduction of photocurrents at the forward bias is ascribed to the strong scattering from plasmon-induced heat. Our findings are expected to be valuable for the development of plasmon-enhanced photodetectors and photovoltaic devices.

AB - Heterojunctions based on atomically thin p-type black phosphorus (BP) and n-type MoS 2 present their outstanding performance in electronic and optoelectronic devices. However, the relative weak photovoltaic characteristics offsets their advantages for high-performance phototransistors or solar cells. Herein, a plasmonic optical antenna arrays with 15nm gap were placed on the overlap regions of BP/ MoS 2 heterostructures for effective light-harvesting. The results demonstrate the photovoltaic characteristics of BP/ MoS 2 heterostructures is clearly enhanced through the hot electrons excited from optical antenna arrays under near-infrared laser (λ=830nm). More important, this enhancement is mainly dominated by effective photo-carrier separation under higher built-in electric field at the reverse bias. In addition, the reduction of photocurrents at the forward bias is ascribed to the strong scattering from plasmon-induced heat. Our findings are expected to be valuable for the development of plasmon-enhanced photodetectors and photovoltaic devices.

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VL - 2018-July

T3 - Proceedings of the IEEE Conference on Nanotechnology

BT - 18th International Conference on Nanotechnology (IEEE-NANO)

PB - IEEE Computer Society

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