TY - JOUR
T1 - Plasmon-enhanced optical nonlinearity for femtosecond all-optical switching
AU - Wang, Kuidong
AU - Chen, Long
AU - Zhang, Haijuan
AU - Hsiao, Hui-Hsin
AU - Tsai, Din Ping
AU - Chen, Jie
N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].
PY - 2017/10/30
Y1 - 2017/10/30
N2 - Ultrafast all-optical switching in metals can be an efficient way for high-speed active photonic devices. However, with the improvement in modulation speed, typically by reducing the optical switching pulse width from picoseconds to femtoseconds, the nonlinear optical response of the metal will decrease significantly, which hinders the realization of the sufficient modulation depth at femtosecond optical control. Here, by combining two optical nonlinear enhancement effects of surface plasmon polaritons, including their extreme sensitivity to refractive index change and their capability to induce strong localized optical fields, we have achieved an ∼50-times enhancement in the modulation depth simultaneously with a switching time of ∼75-fs. Such enhancement was found to be independent of the control intensity, which sets a basis for the future application of femtosecond switching at a minimum power.
AB - Ultrafast all-optical switching in metals can be an efficient way for high-speed active photonic devices. However, with the improvement in modulation speed, typically by reducing the optical switching pulse width from picoseconds to femtoseconds, the nonlinear optical response of the metal will decrease significantly, which hinders the realization of the sufficient modulation depth at femtosecond optical control. Here, by combining two optical nonlinear enhancement effects of surface plasmon polaritons, including their extreme sensitivity to refractive index change and their capability to induce strong localized optical fields, we have achieved an ∼50-times enhancement in the modulation depth simultaneously with a switching time of ∼75-fs. Such enhancement was found to be independent of the control intensity, which sets a basis for the future application of femtosecond switching at a minimum power.
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U2 - 10.1063/1.5002581
DO - 10.1063/1.5002581
M3 - RGC 21 - Publication in refereed journal
SN - 0003-6951
VL - 111
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 18
M1 - 181102
ER -