Plasma immersion Pd ion implantation seeding pattern formation for selective electroless Cu plating

X. Y. Qian; M. H. Kiang; J. Huang; D. Carl; N. W. Cheung; M. A. Lieberman; I. G. Brown; K. M. Yu; M. I. Current

doi:10.1016/0168-583X(91)96301-Z

Plasma immersion Pd ion implantation seeding pattern formation for selective electroless Cu plating

X. Y. Qian
, M. H. Kiang
, J. Huang
, D. Carl
, N. W. Cheung
, M. A. Lieberman
, I. G. Brown
, K. M. Yu
, M. I. Current

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

17 Citations (Scopus)

Abstract

Selective plating of Cu for interconnects was carried out using plasma immersion Pd ion implantation and Cu electroless plating. Pd ions were sputtered from a negatively biased target and ionized in an Ar electron cyclotron resonance (ECR) plasma. The Pd ions were implanted into the SiO₂ substrates biased with negative high pulsed voltages. In our studies, we found the required Pd seeding dose for Cu plating was on the order of5 × 10¹⁴/cm². With a direct Pd implantation, an intermediate activation step using a PdCl₂ solution was eliminated. © 1991.

Original language	English
Pages (from-to)	888-892
Journal	Nuclear Inst. and Methods in Physics Research, B
Volume	55
Issue number	1-4
DOIs	https://doi.org/10.1016/0168-583X(91)96301-Z
Publication status	Published - 2 Apr 1991
Externally published	Yes

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@article{34fda58653d549bc878c22f435dc864c,

title = "Plasma immersion Pd ion implantation seeding pattern formation for selective electroless Cu plating",

abstract = "Selective plating of Cu for interconnects was carried out using plasma immersion Pd ion implantation and Cu electroless plating. Pd ions were sputtered from a negatively biased target and ionized in an Ar electron cyclotron resonance (ECR) plasma. The Pd ions were implanted into the SiO2 substrates biased with negative high pulsed voltages. In our studies, we found the required Pd seeding dose for Cu plating was on the order of5 × 1014/cm2. With a direct Pd implantation, an intermediate activation step using a PdCl2 solution was eliminated. {\textcopyright} 1991.",

author = "Qian, \{X. Y.\} and Kiang, \{M. H.\} and J. Huang and D. Carl and Cheung, \{N. W.\} and Lieberman, \{M. A.\} and Brown, \{I. G.\} and Yu, \{K. M.\} and Current, \{M. I.\}",

year = "1991",

month = apr,

day = "2",

doi = "10.1016/0168-583X(91)96301-Z",

language = "English",

volume = "55",

pages = "888--892",

journal = "Nuclear Inst. and Methods in Physics Research, B",

issn = "0168-583X",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - Plasma immersion Pd ion implantation seeding pattern formation for selective electroless Cu plating

AU - Qian, X. Y.

AU - Kiang, M. H.

AU - Huang, J.

AU - Carl, D.

AU - Cheung, N. W.

AU - Lieberman, M. A.

AU - Brown, I. G.

AU - Yu, K. M.

AU - Current, M. I.

PY - 1991/4/2

Y1 - 1991/4/2

N2 - Selective plating of Cu for interconnects was carried out using plasma immersion Pd ion implantation and Cu electroless plating. Pd ions were sputtered from a negatively biased target and ionized in an Ar electron cyclotron resonance (ECR) plasma. The Pd ions were implanted into the SiO2 substrates biased with negative high pulsed voltages. In our studies, we found the required Pd seeding dose for Cu plating was on the order of5 × 1014/cm2. With a direct Pd implantation, an intermediate activation step using a PdCl2 solution was eliminated. © 1991.

AB - Selective plating of Cu for interconnects was carried out using plasma immersion Pd ion implantation and Cu electroless plating. Pd ions were sputtered from a negatively biased target and ionized in an Ar electron cyclotron resonance (ECR) plasma. The Pd ions were implanted into the SiO2 substrates biased with negative high pulsed voltages. In our studies, we found the required Pd seeding dose for Cu plating was on the order of5 × 1014/cm2. With a direct Pd implantation, an intermediate activation step using a PdCl2 solution was eliminated. © 1991.

UR - https://www.scopus.com/pages/publications/0001495429

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0001495429&origin=recordpage

U2 - 10.1016/0168-583X(91)96301-Z

DO - 10.1016/0168-583X(91)96301-Z

M3 - RGC 21 - Publication in refereed journal

SN - 0168-583X

VL - 55

SP - 888

EP - 892

JO - Nuclear Inst. and Methods in Physics Research, B

JF - Nuclear Inst. and Methods in Physics Research, B

IS - 1-4

ER -

Plasma immersion Pd ion implantation seeding pattern formation for selective electroless Cu plating

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