Plasma doping: Theoretical simulation and use of safer gas

P. K. Chu

doi:10.1109/IWIT.2000.928774

Plasma doping: Theoretical simulation and use of safer gas

P. K. Chu

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

2 Citations (Scopus)

Abstract

Plasma doping (PD) is an alternative technique to form shallow junctions in deep sub-micrometer microelectronic devices. The use of theoretical simulation to derive the energy distribution of implanted ions can lessen the time required for design of PD experiments and recipes. It also provides useful information on the dopant depth profiles. The second part of the paper describes the use of a boron-containing gas that is much less toxic than diborane to form shallow junctions.

Original language	English
Title of host publication	Extended Abstracts of the 1st International Workshop on Junction Technology, IWJT 2000
Publisher	IEEE
Pages	35-40
ISBN (Print)	4891140089, 9784891140083
DOIs	https://doi.org/10.1109/IWIT.2000.928774
Publication status	Published - 2000
Event	1st International Workshop on Junction Technology, IWJT 2000 - Chiba, Japan Duration: 6 Dec 2000 → … https://ieeexplore.ieee.org/xpl/conhome/7383/proceeding

Conference

Conference	1st International Workshop on Junction Technology, IWJT 2000
Place	Japan
City	Chiba
Period	6/12/00 → …
Internet address	https://ieeexplore.ieee.org/xpl/conhome/7383/proceeding

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title = "Plasma doping: Theoretical simulation and use of safer gas",

abstract = "Plasma doping (PD) is an alternative technique to form shallow junctions in deep sub-micrometer microelectronic devices. The use of theoretical simulation to derive the energy distribution of implanted ions can lessen the time required for design of PD experiments and recipes. It also provides useful information on the dopant depth profiles. The second part of the paper describes the use of a boron-containing gas that is much less toxic than diborane to form shallow junctions.",

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T2 - 1st International Workshop on Junction Technology, IWJT 2000

AU - Chu, P. K.

PY - 2000

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N2 - Plasma doping (PD) is an alternative technique to form shallow junctions in deep sub-micrometer microelectronic devices. The use of theoretical simulation to derive the energy distribution of implanted ions can lessen the time required for design of PD experiments and recipes. It also provides useful information on the dopant depth profiles. The second part of the paper describes the use of a boron-containing gas that is much less toxic than diborane to form shallow junctions.

AB - Plasma doping (PD) is an alternative technique to form shallow junctions in deep sub-micrometer microelectronic devices. The use of theoretical simulation to derive the energy distribution of implanted ions can lessen the time required for design of PD experiments and recipes. It also provides useful information on the dopant depth profiles. The second part of the paper describes the use of a boron-containing gas that is much less toxic than diborane to form shallow junctions.

UR - https://www.scopus.com/pages/publications/84969565333

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84969565333&origin=recordpage

U2 - 10.1109/IWIT.2000.928774

DO - 10.1109/IWIT.2000.928774

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 4891140089

SN - 9784891140083

SP - 35

EP - 40

BT - Extended Abstracts of the 1st International Workshop on Junction Technology, IWJT 2000

PB - IEEE

Y2 - 6 December 2000

ER -

Plasma doping: Theoretical simulation and use of safer gas

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