Plasma doping : Progress and potential
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal
|Journal / Publication||Solid State Technology|
|Publication status||Published - Oct 1999|
|Link to Scopus||https://www.scopus.com/record/display.uri?eid=2-s2.0-17744419300&origin=recordpage|
Plasma doping is the leading candidate to replace today's beam-line ion implantation, which is being pushed to the limit by the need for ultra-shailow junctions. Clustercompatible hardware is envisioned to provide simpler, more economical, higher-throughput wafer processing. Part one of this article, in the September issue of SST, reviewed the status of plasma doping, cited device data, and touched on process and equipment issues. Part two discusses potential problems, including charge damage, equipment requirements, and economic factors.