Plasma doping : Progress and potential

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

6 Scopus Citations
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Author(s)

  • S.B. Feleh
  • P. Kellerman
  • F. Sinclair
  • L.A. Larson
  • B. Mizuno

Detail(s)

Original languageEnglish
Pages (from-to)77-82
Journal / PublicationSolid State Technology
Volume42
Issue number10
Publication statusPublished - Oct 1999

Abstract

Plasma doping is the leading candidate to replace today's beam-line ion implantation, which is being pushed to the limit by the need for ultra-shailow junctions. Clustercompatible hardware is envisioned to provide simpler, more economical, higher-throughput wafer processing. Part one of this article, in the September issue of SST, reviewed the status of plasma doping, cited device data, and touched on process and equipment issues. Part two discusses potential problems, including charge damage, equipment requirements, and economic factors.

Citation Format(s)

Plasma doping : Progress and potential. / Chu, P.K.; Feleh, S.B.; Kellerman, P.; Sinclair, F.; Larson, L.A.; Mizuno, B.

In: Solid State Technology, Vol. 42, No. 10, 10.1999, p. 77-82.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal