Plasma doping : Progress and potential

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

7 Scopus Citations
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Author(s)

  • S.B. Felch
  • P. Kellerman
  • F. Sinclair
  • L.A. Larson
  • B. Mizuno

Detail(s)

Original languageEnglish
Pages (from-to)55-60
Journal / PublicationSolid State Technology
Volume42
Issue number9
Publication statusPublished - Sep 1999

Abstract

Beam-line ion implantation, the pre-eminent doping method in silicon, is being pushed to the limit by the need to fabricate ultra-shallow junctions. Plasma doping is envisaged to be the alternative technique suited for the shift to simpler, more economical, higher throughput, and cluster-compatible hardware. The technology has gained much momentum in the past several years and an international plasma doping users group has been formed to bring together equipment manufacturers, process engineers, and researchers. In this article (part one of two parts), we will review the current status of plasma doping, present the latest device data, and discuss process and equipment issues.

Citation Format(s)

Plasma doping : Progress and potential. / Chu, P.K.; Felch, S.B.; Kellerman, P.; Sinclair, F.; Larson, L.A.; Mizuno, B.

In: Solid State Technology, Vol. 42, No. 9, 09.1999, p. 55-60.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review