Plasma associated diamond nucleation on AlN in hot-filament chemical vapor deposition

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

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Original languageEnglish
Pages (from-to)336-340
Journal / PublicationMaterials Letters
Volume44
Issue number6
Publication statusPublished - Jul 2000

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DOI

DOI
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Link to Scopus https://www.scopus.com/record/display.uri?eid=2-s2.0-0033721465&origin=recordpage
Permanent Link https://scholars.cityu.edu.hk/en/publications/publication(9f8e8ef5-9243-4cef-954f-92aa35c25d7a).html

Abstract

Diamond films have been deposited on AlN substrates using hot filament chemical vapor deposition. By applying a negative bias voltage, a high diamond nucleation density on AlN substrates as high as 1010 cm-2 has been realized. The appearance of bias current and plasma induced on the AlN surface was found critical for the enhancement of diamond nucleation density. Satisfactory adhesion of the deposited diamond films with the AlN substrates has been achieved for application purposes.

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Hot Filament Chemic... Keyphrases
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Diamond nucleation Keyphrases
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AlN Substrate Keyphrases
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Nucleation Material Science
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Diamond Material Science
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Hot-Filament Chemic... Material Science
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Aluminum Nitride Material Science
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chemical vapor depo... INIS
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nucleation INIS
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plasma INIS
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Citation Format(s)

[ RIS ] [ BibTeX ]
Plasma associated diamond nucleation on AlN in hot-filament chemical vapor deposition. / Wang, W. L.; Liao, K. J.; Zhang, R. Q.
In: Materials Letters, Vol. 44, No. 6, 07.2000, p. 336-340.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review