Plasma associated diamond nucleation on AlN in hot-filament chemical vapor deposition

W. L. Wang; K. J. Liao; R. Q. Zhang

doi:10.1016/S0167-577X(00)00055-0

Plasma associated diamond nucleation on AlN in hot-filament chemical vapor deposition

W. L. Wang, K. J. Liao, R. Q. Zhang

Centre of Super-Diamond and Advanced Films

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

4 Citations (Scopus)

Abstract

Diamond films have been deposited on AlN substrates using hot filament chemical vapor deposition. By applying a negative bias voltage, a high diamond nucleation density on AlN substrates as high as 10¹⁰ cm^-2 has been realized. The appearance of bias current and plasma induced on the AlN surface was found critical for the enhancement of diamond nucleation density. Satisfactory adhesion of the deposited diamond films with the AlN substrates has been achieved for application purposes.

Original language	English
Pages (from-to)	336-340
Journal	Materials Letters
Volume	44
Issue number	6
DOIs	https://doi.org/10.1016/S0167-577X(00)00055-0
Publication status	Published - Jul 2000

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title = "Plasma associated diamond nucleation on AlN in hot-filament chemical vapor deposition",

abstract = "Diamond films have been deposited on AlN substrates using hot filament chemical vapor deposition. By applying a negative bias voltage, a high diamond nucleation density on AlN substrates as high as 1010 cm-2 has been realized. The appearance of bias current and plasma induced on the AlN surface was found critical for the enhancement of diamond nucleation density. Satisfactory adhesion of the deposited diamond films with the AlN substrates has been achieved for application purposes.",

author = "Wang, {W. L.} and Liao, {K. J.} and Zhang, {R. Q.}",

year = "2000",

month = jul,

doi = "10.1016/S0167-577X(00)00055-0",

language = "English",

volume = "44",

pages = "336--340",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Plasma associated diamond nucleation on AlN in hot-filament chemical vapor deposition

AU - Wang, W. L.

AU - Liao, K. J.

AU - Zhang, R. Q.

PY - 2000/7

Y1 - 2000/7

N2 - Diamond films have been deposited on AlN substrates using hot filament chemical vapor deposition. By applying a negative bias voltage, a high diamond nucleation density on AlN substrates as high as 1010 cm-2 has been realized. The appearance of bias current and plasma induced on the AlN surface was found critical for the enhancement of diamond nucleation density. Satisfactory adhesion of the deposited diamond films with the AlN substrates has been achieved for application purposes.

AB - Diamond films have been deposited on AlN substrates using hot filament chemical vapor deposition. By applying a negative bias voltage, a high diamond nucleation density on AlN substrates as high as 1010 cm-2 has been realized. The appearance of bias current and plasma induced on the AlN surface was found critical for the enhancement of diamond nucleation density. Satisfactory adhesion of the deposited diamond films with the AlN substrates has been achieved for application purposes.

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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0033721465&origin=recordpage

U2 - 10.1016/S0167-577X(00)00055-0

DO - 10.1016/S0167-577X(00)00055-0

M3 - RGC 21 - Publication in refereed journal

SN - 0167-577X

VL - 44

SP - 336

EP - 340

JO - Materials Letters

JF - Materials Letters

IS - 6

ER -

Plasma associated diamond nucleation on AlN in hot-filament chemical vapor deposition

Abstract

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