Plasma-assisted growth and nitrogen doping of graphene films

Microwave plasmas were employed to synthesize single- or double-layer graphene sheets on copper foils using a solid carbon source, polymethylmetacrylate. The utilization of reactive plasmas enables the graphene growth at reduced temperatures as compared to conventional thermal chemical vapor deposition processes. The effects of substrate temperature on graphene quality were studied based on Raman analysis, and a reduction of defects at elevated temperature was observed. Moreover, a facile approach to incorporate nitrogen into graphene by plasma treatment in a nitrogen/hydrogen gas mixture was demonstrated, and most of the nitrogen atoms were verified to be pyridinelike in carbon network. © 2012 American Institute of Physics.