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Piezoresistive sensing in a strongly-coupled high Q Lamé mode silicon MEMS resonator-pair

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review

Abstract

We present a 13 MHz strongly coupled bulk Lamé mode silicon MEMS resonator-pair with quality factor (Q) of 106 (i.e. f·Q product of 1.3×1013) in addition to a 28 dB increase in transduction by uniquely adapting the coupling spring as an integrated piezoresistor. Our device exploits and preserves the intrinsic high Q of the isochoric Lamé mode while also tapping into the high concentration of stress in the coupling spring as the pair of Lamé mode resonators is synchronized to resonate in phase. This concentration of stress along the coupling beam benefits the output transduction efficiency, which in turn results in enhancing overall transduction while preserving very high Q. Q of the device also remains stable with increasing bias current. 
Original languageEnglish
Title of host publicationIFCS 2014 - 2014 IEEE International Frequency Control Symposium, Proceedings
PublisherIEEE
ISBN (Electronic)978-1-4799-4915-1
DOIs
Publication statusPublished - May 2014
Event2014 IEEE International Frequency Control Symposium, IFCS 2014 - Taipei, Taiwan, China
Duration: 19 May 201422 May 2014

Conference

Conference2014 IEEE International Frequency Control Symposium, IFCS 2014
PlaceTaiwan, China
CityTaipei
Period19/05/1422/05/14

Research Keywords

  • Lamé mode
  • mechanical coupling
  • motional transconductance
  • piezoresistance
  • quality factor

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