Piece-wise linear approximation of MOS nonlinear junction capacitance in high-frequency class E amplifier design

S. W. Ma; Hei Wong; C. K. Ho

doi:10.1109/EDSSC.2003.1283521

Piece-wise linear approximation of MOS nonlinear junction capacitance in high-frequency class E amplifier design

S. W. Ma
, Hei Wong
, C. K. Ho

Department of Electrical Engineering

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

3 Citations (Scopus)

Abstract

This work presents a detailed analysis of the high-frequency class E amplifier realized using MOS transistor with particular attention on the effects of the nonlinear junction capacitance in the drain region. To enable analytical analysis and for easy of circuit design, the junction capacitance is approximated using piece-wise linear functions. Results show that this treatment is accurate enough and the amplifier characteristics calculated with the newly developed design formulae agree very well with those of the Pspice simulation.

Original language	English
Title of host publication	2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003
Publisher	IEEE
Pages	233-236
ISBN (Print)	0780377494, 9780780377493
DOIs	https://doi.org/10.1109/EDSSC.2003.1283521
Publication status	Published - 2003
Event	2003 IEEE Conference on Electron Devices and Solid-State Circuits - New World Renaissance Hotel, Hong Kong, China Duration: 16 Dec 2003 → 18 Dec 2003

Conference

Conference	2003 IEEE Conference on Electron Devices and Solid-State Circuits
Place	Hong Kong, China
Period	16/12/03 → 18/12/03

Access Output

10.1109/EDSSC.2003.1283521

Other Access Options

Check CityUHK Library

Permanent Link

Right click to copy link

Cite this

@inproceedings{c76029d35e314d3c95dd59e3c8f44845,

title = "Piece-wise linear approximation of MOS nonlinear junction capacitance in high-frequency class E amplifier design",

abstract = "This work presents a detailed analysis of the high-frequency class E amplifier realized using MOS transistor with particular attention on the effects of the nonlinear junction capacitance in the drain region. To enable analytical analysis and for easy of circuit design, the junction capacitance is approximated using piece-wise linear functions. Results show that this treatment is accurate enough and the amplifier characteristics calculated with the newly developed design formulae agree very well with those of the Pspice simulation.",

author = "Ma, \{S. W.\} and Hei Wong and Ho, \{C. K.\}",

year = "2003",

doi = "10.1109/EDSSC.2003.1283521",

language = "English",

isbn = "0780377494",

pages = "233--236",

booktitle = "2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003",

publisher = "IEEE",

address = "United States",

note = "2003 IEEE Conference on Electron Devices and Solid-State Circuits ; Conference date: 16-12-2003 Through 18-12-2003",

}

Ma, SW, Wong, H & Ho, CK 2003, Piece-wise linear approximation of MOS nonlinear junction capacitance in high-frequency class E amplifier design. in 2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003., 1283521, IEEE, pp. 233-236, 2003 IEEE Conference on Electron Devices and Solid-State Circuits, Hong Kong, China, 16/12/03. https://doi.org/10.1109/EDSSC.2003.1283521

Piece-wise linear approximation of MOS nonlinear junction capacitance in high-frequency class E amplifier design. / Ma, S. W.; Wong, Hei; Ho, C. K.
2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003. IEEE, 2003. p. 233-236 1283521.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Piece-wise linear approximation of MOS nonlinear junction capacitance in high-frequency class E amplifier design

AU - Ma, S. W.

AU - Wong, Hei

AU - Ho, C. K.

PY - 2003

Y1 - 2003

N2 - This work presents a detailed analysis of the high-frequency class E amplifier realized using MOS transistor with particular attention on the effects of the nonlinear junction capacitance in the drain region. To enable analytical analysis and for easy of circuit design, the junction capacitance is approximated using piece-wise linear functions. Results show that this treatment is accurate enough and the amplifier characteristics calculated with the newly developed design formulae agree very well with those of the Pspice simulation.

AB - This work presents a detailed analysis of the high-frequency class E amplifier realized using MOS transistor with particular attention on the effects of the nonlinear junction capacitance in the drain region. To enable analytical analysis and for easy of circuit design, the junction capacitance is approximated using piece-wise linear functions. Results show that this treatment is accurate enough and the amplifier characteristics calculated with the newly developed design formulae agree very well with those of the Pspice simulation.

UR - https://www.scopus.com/pages/publications/84946409175

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84946409175&origin=recordpage

U2 - 10.1109/EDSSC.2003.1283521

DO - 10.1109/EDSSC.2003.1283521

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 0780377494

SN - 9780780377493

SP - 233

EP - 236

BT - 2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003

PB - IEEE

T2 - 2003 IEEE Conference on Electron Devices and Solid-State Circuits

Y2 - 16 December 2003 through 18 December 2003

ER -

Piece-wise linear approximation of MOS nonlinear junction capacitance in high-frequency class E amplifier design

Abstract

Conference

Access Output

Other Access Options

Permanent Link

Other Files and Links

Fingerprint

Cite this