Physics and model of strengthening by parallel stacking faults

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

96 Scopus Citations
Scopus Metrics
View graph of relations

Author(s)

  • W. W. Jian
  • G. M. Cheng
  • W. Z. Xu
  • C. C. Koch
  • Q. D. Wang
  • S. N. Mathaudhu

Detail(s)

Original languageEnglish
Article number133108
Journal / PublicationApplied Physics Letters
Volume103
Issue number13
Publication statusPublished - 23 Sept 2013
Externally publishedYes

Link(s)

DOI

DOI
Check@CityULib
Link to Scopus https://www.scopus.com/record/display.uri?eid=2-s2.0-84885007645&origin=recordpage
Permanent Link https://scholars.cityu.edu.hk/en/publications/publication(32dd2ed8-3981-47bb-a444-7c220a8fd74b).html

Abstract

We have recently reported that parallel stacking faults (SFs) can tremendously increase the strength of a magnesium alloy. The strengthening is found to increase linearly with the reciprocal of the mean SF spacing, d. In this study we analyze dislocation interactions with SFs, and then propose a physics-based model to explain the observed relationship between yield strength and SFs spacing. Similar to the empirical Hall-Petch relationship for grain size, it is expected that this strengthening mechanism will hold true for a variety of materials engineered with parallel spaced stacking faults over a wide range of fault spacing. © 2013 AIP Publishing LLC.

Fingerprint

Publication fingerprints text

100
Crystal Defect Material Science
100
Dislocation Interac... Engineering
100
Hall-Petch Relation... Engineering
100
Strengthening Mecha... Engineering
100
Yield Point Engineering
16
Grain Size Material Science
16
Yield Stress Material Science
16
Magnesium Alloy Material Science
Full Fingerprint ›

Citation Format(s)

[ RIS ] [ BibTeX ]
Physics and model of strengthening by parallel stacking faults. / Jian, W. W.; Cheng, G. M.; Xu, W. Z. et al.
In: Applied Physics Letters, Vol. 103, No. 13, 133108, 23.09.2013.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review