Physical structure of light-emitting porous polycrystalline silicon thin films

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Original languageEnglish
Pages (from-to)457-462
Journal / PublicationMicroelectronics Reliability
Volume39
Issue number4
Publication statusPublished - Apr 1999

Abstract

This paper reports the surface electronic structure of light-emitting porous polycrystalline silicon (PPS) using X-ray photoelectron spectroscopy (XPS). We find that the PPS films with strong photoluminescence (PL) effect can only be observed in thin film with trace amount of silicon nanoclusters and the luminescence can be enhanced remarkably with proper passivation of the PPS surface. Incomplete oxidation of silicon (Si3+ or Si2+) does not lead to visible PL. We further estimate that the average size of silicon nanoclusters is in the range of 20-30 angstroms in the sample having PL emission.