Physical structure of light-emitting porous polycrystalline silicon thin films

P. G. Han; H. Wong; M. C. Poon

doi:10.1016/S0026-2714(99)00021-9

Physical structure of light-emitting porous polycrystalline silicon thin films

P. G. Han
, H. Wong^*
, M. C. Poon

^*Corresponding author for this work

Department of Electrical Engineering

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

4 Citations (Scopus)

Abstract

This paper reports the surface electronic structure of light-emitting porous polycrystalline silicon (PPS) using X-ray photoelectron spectroscopy (XPS). We find that the PPS films with strong photoluminescence (PL) effect can only be observed in thin film with trace amount of silicon nanoclusters and the luminescence can be enhanced remarkably with proper passivation of the PPS surface. Incomplete oxidation of silicon (Si³⁺ or Si²⁺) does not lead to visible PL. We further estimate that the average size of silicon nanoclusters is in the range of 20-30 angstroms in the sample having PL emission. © 1999 Elsevier Science Ltd. All rights reserved.

Original language	English
Pages (from-to)	457-462
Journal	Microelectronics Reliability
Volume	39
Issue number	4
DOIs	https://doi.org/10.1016/S0026-2714(99)00021-9
Publication status	Published - Apr 1999

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title = "Physical structure of light-emitting porous polycrystalline silicon thin films",

abstract = "This paper reports the surface electronic structure of light-emitting porous polycrystalline silicon (PPS) using X-ray photoelectron spectroscopy (XPS). We find that the PPS films with strong photoluminescence (PL) effect can only be observed in thin film with trace amount of silicon nanoclusters and the luminescence can be enhanced remarkably with proper passivation of the PPS surface. Incomplete oxidation of silicon (Si3+ or Si2+) does not lead to visible PL. We further estimate that the average size of silicon nanoclusters is in the range of 20-30 angstroms in the sample having PL emission. {\textcopyright} 1999 Elsevier Science Ltd. All rights reserved.",

author = "Han, \{P. G.\} and H. Wong and Poon, \{M. C.\}",

year = "1999",

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doi = "10.1016/S0026-2714(99)00021-9",

language = "English",

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pages = "457--462",

journal = "Microelectronics Reliability",

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TY - JOUR

T1 - Physical structure of light-emitting porous polycrystalline silicon thin films

AU - Han, P. G.

AU - Wong, H.

AU - Poon, M. C.

PY - 1999/4

Y1 - 1999/4

N2 - This paper reports the surface electronic structure of light-emitting porous polycrystalline silicon (PPS) using X-ray photoelectron spectroscopy (XPS). We find that the PPS films with strong photoluminescence (PL) effect can only be observed in thin film with trace amount of silicon nanoclusters and the luminescence can be enhanced remarkably with proper passivation of the PPS surface. Incomplete oxidation of silicon (Si3+ or Si2+) does not lead to visible PL. We further estimate that the average size of silicon nanoclusters is in the range of 20-30 angstroms in the sample having PL emission. © 1999 Elsevier Science Ltd. All rights reserved.

AB - This paper reports the surface electronic structure of light-emitting porous polycrystalline silicon (PPS) using X-ray photoelectron spectroscopy (XPS). We find that the PPS films with strong photoluminescence (PL) effect can only be observed in thin film with trace amount of silicon nanoclusters and the luminescence can be enhanced remarkably with proper passivation of the PPS surface. Incomplete oxidation of silicon (Si3+ or Si2+) does not lead to visible PL. We further estimate that the average size of silicon nanoclusters is in the range of 20-30 angstroms in the sample having PL emission. © 1999 Elsevier Science Ltd. All rights reserved.

UR - https://www.scopus.com/pages/publications/0032657484

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0032657484&origin=recordpage

U2 - 10.1016/S0026-2714(99)00021-9

DO - 10.1016/S0026-2714(99)00021-9

M3 - RGC 21 - Publication in refereed journal

SN - 0026-2714

VL - 39

SP - 457

EP - 462

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 4

ER -

Physical structure of light-emitting porous polycrystalline silicon thin films

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