TY - GEN
T1 - Physical and chemical characterization of laser-recorded phase-change marks on amorphous ge2sb2te5 thin films
AU - Chang, Chia Min
AU - Tseng, Ming Lun
AU - Chu, Cheng Hung
AU - Mansuripur, Masud
AU - Tsai, Din Ping
N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].
PY - 2011
Y1 - 2011
N2 - As-deposited thin films of Ge2Sb2Te5 are investigated for the purpose of understanding the local electrical conductivity and structural phase-transitions of recorded marks under the influence of focused laser beam. We have written on these films micron-sized crystalline marks, ablated holes surrounded by crystalline rings, and other multi-ring structures containing both amorphous and crystalline zones with the aid of a focused laser beam. The high-contrast conductivity of GST recorded marks under various illumination conditions were investigated using Conductive-Atomic Force Microscopy (C-AFM). Also, selective chemical etching of recorded marks in conjunction with optical, atomic force, and electron microscopy as well as local electron diffraction analysis are used to discern the complex structural features created under a broad range of laser powers and pulse durations. Clarifying the nature of physical and chemical characterization associated with laser-recorded marks in chalcogenide Ge2Sb2Te5 thin films provides useful information for reversible optical and electronic data storage, as well as for phase-change (thermal) lithography. © 2011 OSA.
AB - As-deposited thin films of Ge2Sb2Te5 are investigated for the purpose of understanding the local electrical conductivity and structural phase-transitions of recorded marks under the influence of focused laser beam. We have written on these films micron-sized crystalline marks, ablated holes surrounded by crystalline rings, and other multi-ring structures containing both amorphous and crystalline zones with the aid of a focused laser beam. The high-contrast conductivity of GST recorded marks under various illumination conditions were investigated using Conductive-Atomic Force Microscopy (C-AFM). Also, selective chemical etching of recorded marks in conjunction with optical, atomic force, and electron microscopy as well as local electron diffraction analysis are used to discern the complex structural features created under a broad range of laser powers and pulse durations. Clarifying the nature of physical and chemical characterization associated with laser-recorded marks in chalcogenide Ge2Sb2Te5 thin films provides useful information for reversible optical and electronic data storage, as well as for phase-change (thermal) lithography. © 2011 OSA.
UR - https://www.scopus.com/pages/publications/85088184329
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-85088184329&origin=recordpage
U2 - 10.1364/isom_ods.2011.owc1
DO - 10.1364/isom_ods.2011.owc1
M3 - RGC 32 - Refereed conference paper (with host publication)
SN - 9781557529152
T3 - Optics InfoBase Conference Papers
BT - Joint International Symposium on Optical Memory and Optical Data Storage, ISOM_ODS 2011
PB - Optical Society of America (OSA)
T2 - Joint International Symposium on Optical Memory and Optical Data Storage, ISOM_ODS 2011
Y2 - 17 July 2011 through 20 July 2011
ER -